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- Publisher Website: 10.1021/acsami.0c13144
- Scopus: eid_2-s2.0-85095672508
- PMID: 33094997
- WOS: WOS:000589384100042
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Article: Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip
Title | Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip |
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Authors | |
Keywords | gallium nitride refractometer refractive index sensing monolithic photonic integration |
Issue Date | 2020 |
Publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick |
Citation | ACS Applied Materials & Interfaces, 2020, v. 12 n. 44, p. 49748-49754 How to Cite? |
Abstract | Optical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 x 320 mu m(2). The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 mu A/RIU and a resolution of 6.4 x 10(-6) RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer. |
Persistent Identifier | http://hdl.handle.net/10722/295900 |
ISSN | 2023 Impact Factor: 8.3 2023 SCImago Journal Rankings: 2.058 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, L | - |
dc.contributor.author | An, X | - |
dc.contributor.author | JING, J | - |
dc.contributor.author | Jin, H | - |
dc.contributor.author | Chu, Z | - |
dc.contributor.author | Li, KH | - |
dc.date.accessioned | 2021-02-08T08:15:37Z | - |
dc.date.available | 2021-02-08T08:15:37Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | ACS Applied Materials & Interfaces, 2020, v. 12 n. 44, p. 49748-49754 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10722/295900 | - |
dc.description.abstract | Optical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 x 320 mu m(2). The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 mu A/RIU and a resolution of 6.4 x 10(-6) RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer. | - |
dc.language | eng | - |
dc.publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick | - |
dc.relation.ispartof | ACS Applied Materials & Interfaces | - |
dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html]. | - |
dc.subject | gallium nitride | - |
dc.subject | refractometer | - |
dc.subject | refractive index sensing | - |
dc.subject | monolithic | - |
dc.subject | photonic integration | - |
dc.title | Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip | - |
dc.type | Article | - |
dc.identifier.email | Chu, Z: zqchu@eee.hku.hk | - |
dc.identifier.authority | Chu, Z=rp02472 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/acsami.0c13144 | - |
dc.identifier.pmid | 33094997 | - |
dc.identifier.scopus | eid_2-s2.0-85095672508 | - |
dc.identifier.hkuros | 321227 | - |
dc.identifier.volume | 12 | - |
dc.identifier.issue | 44 | - |
dc.identifier.spage | 49748 | - |
dc.identifier.epage | 49754 | - |
dc.identifier.isi | WOS:000589384100042 | - |
dc.publisher.place | United States | - |