File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip

TitleUltracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip
Authors
Keywordsgallium nitride
refractometer
refractive index sensing
monolithic
photonic integration
Issue Date2020
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
ACS Applied Materials & Interfaces, 2020, v. 12 n. 44, p. 49748-49754 How to Cite?
AbstractOptical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 x 320 mu m(2). The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 mu A/RIU and a resolution of 6.4 x 10(-6) RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer.
Persistent Identifierhttp://hdl.handle.net/10722/295900
ISSN
2021 Impact Factor: 10.383
2020 SCImago Journal Rankings: 2.535
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, L-
dc.contributor.authorAn, X-
dc.contributor.authorJING, J-
dc.contributor.authorJin, H-
dc.contributor.authorChu, Z-
dc.contributor.authorLi, KH-
dc.date.accessioned2021-02-08T08:15:37Z-
dc.date.available2021-02-08T08:15:37Z-
dc.date.issued2020-
dc.identifier.citationACS Applied Materials & Interfaces, 2020, v. 12 n. 44, p. 49748-49754-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/295900-
dc.description.abstractOptical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 x 320 mu m(2). The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 mu A/RIU and a resolution of 6.4 x 10(-6) RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick-
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectgallium nitride-
dc.subjectrefractometer-
dc.subjectrefractive index sensing-
dc.subjectmonolithic-
dc.subjectphotonic integration-
dc.titleUltracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip-
dc.typeArticle-
dc.identifier.emailChu, Z: zqchu@eee.hku.hk-
dc.identifier.authorityChu, Z=rp02472-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.0c13144-
dc.identifier.pmid33094997-
dc.identifier.scopuseid_2-s2.0-85095672508-
dc.identifier.hkuros321227-
dc.identifier.volume12-
dc.identifier.issue44-
dc.identifier.spage49748-
dc.identifier.epage49754-
dc.identifier.isiWOS:000589384100042-
dc.publisher.placeUnited States-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats