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- Publisher Website: 10.1016/j.apsusc.2020.148656
- Scopus: eid_2-s2.0-85098945115
- WOS: WOS:000618300000002
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Article: High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering
Title | High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering |
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Authors | |
Keywords | Organic thin-film transistor High-k dielectric Remote phonon scattering Surface-roughness scattering |
Issue Date | 2021 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc |
Citation | Applied Surface Science, 2021, v. 544, p. article no. 148656 How to Cite? |
Abstract | Pentacene organic thin-film transistors (OTFTs) with very high carrier mobility have been achieved on both rigid and flexible substrates by using high-k gate dielectric and metal gate. The high-k gate dielectric with suitable thickness can reduce the surface-roughness scattering, while the metal gate can suppress the remote phonon scattering. As a result, based on NbLaO gate dielectric, OTFTs with high carrier mobility of 10.6 cm2 V−1 s−1 (7.99 cm2 V−1 s−1) with the capacitance per unit area measured at frequency of 1 kHz and small threshold voltage of −0.92 V (−0.74 V) fabricated on Pd-coated Si substrate (Pd-coated vacuum tape) are realized, though they have rougher dielectric surface and smaller pentacene grains than their counterparts fabricated on n-Si substrate. Moreover, with the addition of 13-nm SiO2 interlayer between the NbLaO gate dielectric and metal gate electrode, the carrier mobility decreases by 71% and 65% for the OTFTs on Si and V.T. substrates, respectively, highlighting the importance of the RPS. |
Persistent Identifier | http://hdl.handle.net/10722/306395 |
ISSN | 2023 Impact Factor: 6.3 2023 SCImago Journal Rankings: 1.210 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Han, CY | - |
dc.contributor.author | Tang, WM | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2021-10-20T10:22:58Z | - |
dc.date.available | 2021-10-20T10:22:58Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Applied Surface Science, 2021, v. 544, p. article no. 148656 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10722/306395 | - |
dc.description.abstract | Pentacene organic thin-film transistors (OTFTs) with very high carrier mobility have been achieved on both rigid and flexible substrates by using high-k gate dielectric and metal gate. The high-k gate dielectric with suitable thickness can reduce the surface-roughness scattering, while the metal gate can suppress the remote phonon scattering. As a result, based on NbLaO gate dielectric, OTFTs with high carrier mobility of 10.6 cm2 V−1 s−1 (7.99 cm2 V−1 s−1) with the capacitance per unit area measured at frequency of 1 kHz and small threshold voltage of −0.92 V (−0.74 V) fabricated on Pd-coated Si substrate (Pd-coated vacuum tape) are realized, though they have rougher dielectric surface and smaller pentacene grains than their counterparts fabricated on n-Si substrate. Moreover, with the addition of 13-nm SiO2 interlayer between the NbLaO gate dielectric and metal gate electrode, the carrier mobility decreases by 71% and 65% for the OTFTs on Si and V.T. substrates, respectively, highlighting the importance of the RPS. | - |
dc.language | eng | - |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc | - |
dc.relation.ispartof | Applied Surface Science | - |
dc.subject | Organic thin-film transistor | - |
dc.subject | High-k dielectric | - |
dc.subject | Remote phonon scattering | - |
dc.subject | Surface-roughness scattering | - |
dc.title | High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.apsusc.2020.148656 | - |
dc.identifier.scopus | eid_2-s2.0-85098945115 | - |
dc.identifier.hkuros | 326836 | - |
dc.identifier.volume | 544 | - |
dc.identifier.spage | article no. 148656 | - |
dc.identifier.epage | article no. 148656 | - |
dc.identifier.isi | WOS:000618300000002 | - |
dc.publisher.place | Netherlands | - |