High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature-Processed Hf0.13La0.87O as Gate Dielectric

Abstract

High-performance pentace organic thin-film transistors (OTFTs) with room-temperature-processed Hf0.13 La0.87O as gate dielectric and Pd as gate electrode have been fabricated on both rigid Si and flexible polymide (PI) substrates. The OTFT on PI (Si) can achieve a high carrier mobility of 10.3 cm 2 V -1 s -1 (12.5 cm 2 V -1 s -1 ), and has a negligible hysteresis of -0.17 V (-0.08 V), small sub-threshold swing of 0.12 V/dec (0.11 V/dec) and low threshold voltage of -0.65 V (-0.86 V). After the devices have been exposed to the air for 30 days without encapsulation, their carrier mobilities degrade by less than 10%, indicating that the devices have good stability in the air.