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Article: Development of chipscale InGaN RGB displays using strain-relaxed nanosphere-defined nanopillars
Title | Development of chipscale InGaN RGB displays using strain-relaxed nanosphere-defined nanopillars |
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Authors | |
Issue Date | 2022 |
Publisher | IOP. The Journal's web site is located at http://www.iop.org/journals/nano |
Citation | Nanotechnology, 2022, v. 33, p. 285202 How to Cite? |
Abstract | Chip-scale red, green and blue (RGB) light emission on an InGaN/GaN multi-quantum well wafer adopting a top-down fabrication approach is demonstrated in this study, facilitated by shadow-masked nanosphere lithography for precise site-controlled nano-patterning. Exploiting the strain relaxation mechanism by fabricating arrays of nanosphere-defined nanopillars of two different dimensions utilizing a sequential shadow-masked nanosphere coating approach into the blue and green light-emitting pixel regions on a red-light emitting InGaN/GaN wafer, RGB light emission from a monolithic chip is demonstrated. The micro-sized RGB light-emitting pixels emit at 645 nm–680 nm, 510 nm–521 nm and 475 nm–498 nm respectively, achieving a maximum color gamut of 60% NTSC and 72% sRGB. Dimensional fluctuations of the nanopillars of 73% and 71% for the green and blue light-emitting pixels, respectively, are estimated from scanning electron microscope images of the fabricated device, corresponding to fluctuations in spectral blue-shifts of 5.4 nm and 21.2 nm as estimated by strain-coupled k · p Schrödinger calculations, consistent with observations from micro-photoluminescence (μ-PL) mapping which shows deviations of emission wavelengths for the RGB light-emitting pixels to be 8.9 nm, 14.9 nm and 23.7 nm, respectively. The RGB pixels are also configured in a matrix-addressable configuration to form an RGB microdisplay, demonstrating the feasibility of the approach towards chip-scale color displays. |
Persistent Identifier | http://hdl.handle.net/10722/312724 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Fu, WYG | - |
dc.contributor.author | Choi, HW | - |
dc.date.accessioned | 2022-05-12T10:54:43Z | - |
dc.date.available | 2022-05-12T10:54:43Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | Nanotechnology, 2022, v. 33, p. 285202 | - |
dc.identifier.uri | http://hdl.handle.net/10722/312724 | - |
dc.description.abstract | Chip-scale red, green and blue (RGB) light emission on an InGaN/GaN multi-quantum well wafer adopting a top-down fabrication approach is demonstrated in this study, facilitated by shadow-masked nanosphere lithography for precise site-controlled nano-patterning. Exploiting the strain relaxation mechanism by fabricating arrays of nanosphere-defined nanopillars of two different dimensions utilizing a sequential shadow-masked nanosphere coating approach into the blue and green light-emitting pixel regions on a red-light emitting InGaN/GaN wafer, RGB light emission from a monolithic chip is demonstrated. The micro-sized RGB light-emitting pixels emit at 645 nm–680 nm, 510 nm–521 nm and 475 nm–498 nm respectively, achieving a maximum color gamut of 60% NTSC and 72% sRGB. Dimensional fluctuations of the nanopillars of 73% and 71% for the green and blue light-emitting pixels, respectively, are estimated from scanning electron microscope images of the fabricated device, corresponding to fluctuations in spectral blue-shifts of 5.4 nm and 21.2 nm as estimated by strain-coupled k · p Schrödinger calculations, consistent with observations from micro-photoluminescence (μ-PL) mapping which shows deviations of emission wavelengths for the RGB light-emitting pixels to be 8.9 nm, 14.9 nm and 23.7 nm, respectively. The RGB pixels are also configured in a matrix-addressable configuration to form an RGB microdisplay, demonstrating the feasibility of the approach towards chip-scale color displays. | - |
dc.language | eng | - |
dc.publisher | IOP. The Journal's web site is located at http://www.iop.org/journals/nano | - |
dc.relation.ispartof | Nanotechnology | - |
dc.title | Development of chipscale InGaN RGB displays using strain-relaxed nanosphere-defined nanopillars | - |
dc.type | Article | - |
dc.identifier.email | Fu, WYG: wyfu@hku.hk | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.authority | Fu, WYG=rp02840 | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.identifier.doi | 10.1088/1361-6528/ac6399 | - |
dc.identifier.hkuros | 332916 | - |
dc.identifier.volume | 33 | - |
dc.identifier.spage | 285202 | - |
dc.identifier.epage | 285202 | - |
dc.identifier.isi | WOS:000786747800001 | - |