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Article: Simulation-assisted solution-processing method for large-area, high-performance C10DNTT organic semiconductor crystal

TitleSimulation-assisted solution-processing method for large-area, high-performance C10DNTT organic semiconductor crystal
Authors
PENG, BWang, ZChan, KL
Issue Date2016
Citation
Journal of Materials Chemistry C, 2016, v. 4, p. 8628-8633 How to Cite?
DOI: http://dx.doi.org/10.1039/C6TC03432B
Persistent Identifierhttp://hdl.handle.net/10722/312742
ISI Accession Number ID
WOS:000385477300004
Grants
Organic memory array fabricated under ambient air environment: from polycrystalline thin film to single crystal devices

 

DC FieldValueLanguage
dc.contributor.authorPENG, B-
dc.contributor.authorWang, Z-
dc.contributor.authorChan, KL-
dc.date.accessioned2022-05-12T10:54:57Z-
dc.date.available2022-05-12T10:54:57Z-
dc.date.issued2016-
dc.identifier.citationJournal of Materials Chemistry C, 2016, v. 4, p. 8628-8633-
dc.identifier.urihttp://hdl.handle.net/10722/312742-
dc.languageeng-
dc.relation.ispartofJournal of Materials Chemistry C-
dc.titleSimulation-assisted solution-processing method for large-area, high-performance C10DNTT organic semiconductor crystal-
dc.typeArticle-
dc.identifier.emailChan, KL: pklc@hku.hk-
dc.identifier.authorityChan, KL=rp01532-
dc.identifier.doi10.1039/C6TC03432B-
dc.identifier.hkuros332962-
dc.identifier.volume4-
dc.identifier.spage8628-
dc.identifier.epage8633-
dc.identifier.isiWOS:000385477300004-
dc.relation.projectOrganic memory array fabricated under ambient air environment: from polycrystalline thin film to single crystal devices-

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