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- Publisher Website: 10.1063/5.0049153
- WOS: WOS:000681705200012
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Article: Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode
Title | Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode |
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Authors | |
Issue Date | 2021 |
Citation | Journal of Applied Physics, 2021, v. 130, p. 015302 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/314777 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | SU, H | - |
dc.contributor.author | Tang, WM | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2022-08-05T09:34:24Z | - |
dc.date.available | 2022-08-05T09:34:24Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Journal of Applied Physics, 2021, v. 130, p. 015302 | - |
dc.identifier.uri | http://hdl.handle.net/10722/314777 | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.title | Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1063/5.0049153 | - |
dc.identifier.hkuros | 335010 | - |
dc.identifier.volume | 130 | - |
dc.identifier.spage | 015302 | - |
dc.identifier.epage | 015302 | - |
dc.identifier.isi | WOS:000681705200012 | - |