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Article: Plasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics

TitlePlasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics
Authors
MA, YSU, HTang, WMLai, PT
Issue Date2021
Citation
Applied Surface Science, 2021, v. 565, p. 150374 How to Cite?
DOI: http://dx.doi.org/10.1016/j.apsusc.2021.150374
Persistent Identifierhttp://hdl.handle.net/10722/315113
ISI Accession Number ID
WOS:000681145900003

 

DC FieldValueLanguage
dc.contributor.authorMA, Y-
dc.contributor.authorSU, H-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2022-08-05T09:40:26Z-
dc.date.available2022-08-05T09:40:26Z-
dc.date.issued2021-
dc.identifier.citationApplied Surface Science, 2021, v. 565, p. 150374-
dc.identifier.urihttp://hdl.handle.net/10722/315113-
dc.languageeng-
dc.relation.ispartofApplied Surface Science-
dc.titlePlasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1016/j.apsusc.2021.150374-
dc.identifier.hkuros335009-
dc.identifier.volume565-
dc.identifier.spage150374-
dc.identifier.epage150374-
dc.identifier.isiWOS:000681145900003-

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