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Article: Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

TitleSimulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
Authors
ZHENG, YTang, WMChau, TSin, JLai, PT
Issue Date2021
Citation
IEEE Journal of the Electron Devices Society, 2021, v. 9, p. 951-957 How to Cite?
DOI: http://dx.doi.org/10.1109/JEDS.2021.3116715
Persistent Identifierhttp://hdl.handle.net/10722/315114
ISI Accession Number ID
WOS:000707441500006

 

DC FieldValueLanguage
dc.contributor.authorZHENG, Y-
dc.contributor.authorTang, WM-
dc.contributor.authorChau, T-
dc.contributor.authorSin, J-
dc.contributor.authorLai, PT-
dc.date.accessioned2022-08-05T09:40:27Z-
dc.date.available2022-08-05T09:40:27Z-
dc.date.issued2021-
dc.identifier.citationIEEE Journal of the Electron Devices Society, 2021, v. 9, p. 951-957-
dc.identifier.urihttp://hdl.handle.net/10722/315114-
dc.languageeng-
dc.relation.ispartofIEEE Journal of the Electron Devices Society-
dc.titleSimulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/JEDS.2021.3116715-
dc.identifier.hkuros335012-
dc.identifier.volume9-
dc.identifier.spage951-
dc.identifier.epage957-
dc.identifier.isiWOS:000707441500006-

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