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Article: Anti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors

TitleAnti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors
Authors
SU, HTang, WMLai, PT
Issue Date2022
Citation
IEEE Transactions on Electron Devices, 2022, v. 69, p. 174-179 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2021.3129984
Persistent Identifierhttp://hdl.handle.net/10722/315115
ISI Accession Number ID
WOS:000732628200001

 

DC FieldValueLanguage
dc.contributor.authorSU, H-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2022-08-05T09:40:28Z-
dc.date.available2022-08-05T09:40:28Z-
dc.date.issued2022-
dc.identifier.citationIEEE Transactions on Electron Devices, 2022, v. 69, p. 174-179-
dc.identifier.urihttp://hdl.handle.net/10722/315115-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.titleAnti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2021.3129984-
dc.identifier.hkuros335013-
dc.identifier.volume69-
dc.identifier.spage174-
dc.identifier.epage179-
dc.identifier.isiWOS:000732628200001-

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