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Article: Advanced Architecture for Colloidal PbS Quantum Dot Solar Cells Exploiting a CdSe Quantum Dot Buffer Layer

TitleAdvanced Architecture for Colloidal PbS Quantum Dot Solar Cells Exploiting a CdSe Quantum Dot Buffer Layer
Authors
Keywordsbuffer layer
CdSe
interface
PbS
quantum dot
solar cell
Issue Date2016
Citation
ACS Nano, 2016, v. 10, n. 10, p. 9267-9273 How to Cite?
AbstractAdvanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.
Persistent Identifierhttp://hdl.handle.net/10722/318637
ISSN
2021 Impact Factor: 18.027
2020 SCImago Journal Rankings: 5.554
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhao, Tianshuo-
dc.contributor.authorGoodwin, Earl D.-
dc.contributor.authorGuo, Jiacen-
dc.contributor.authorWang, Han-
dc.contributor.authorDiroll, Benjamin T.-
dc.contributor.authorMurray, Christopher B.-
dc.contributor.authorKagan, Cherie R.-
dc.date.accessioned2022-10-11T12:24:13Z-
dc.date.available2022-10-11T12:24:13Z-
dc.date.issued2016-
dc.identifier.citationACS Nano, 2016, v. 10, n. 10, p. 9267-9273-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/318637-
dc.description.abstractAdvanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectbuffer layer-
dc.subjectCdSe-
dc.subjectinterface-
dc.subjectPbS-
dc.subjectquantum dot-
dc.subjectsolar cell-
dc.titleAdvanced Architecture for Colloidal PbS Quantum Dot Solar Cells Exploiting a CdSe Quantum Dot Buffer Layer-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.6b03175-
dc.identifier.scopuseid_2-s2.0-84993949758-
dc.identifier.volume10-
dc.identifier.issue10-
dc.identifier.spage9267-
dc.identifier.epage9273-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000386423600026-

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