File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1021/acs.chemmater.2c01840
- Scopus: eid_2-s2.0-85137911633
- WOS: WOS:000855149900001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Engineering the Surface Chemistry of Colloidal InP Quantum Dots for Charge Transport
Title | Engineering the Surface Chemistry of Colloidal InP Quantum Dots for Charge Transport |
---|---|
Authors | |
Issue Date | 2022 |
Citation | Chemistry of Materials, 2022, v, 34 n. 18, p. 8306-8315 How to Cite? |
Abstract | Colloidal InP quantum dots (QDs) have emerged as potential candidates for constructing nontoxic QD-based optoelectronic devices. However, charge transport in InP QD thin-film assemblies has been limitedly explored. Herein, we report the synthesis of 8 nm edge length (6.5 nm in height), tetrahedral InP QDs and study charge transport in thin films using the platform of the field-effect transistor (FET). We design a hybrid ligand-exchange strategy that combines solution-based exchange with S2- and solid-state exchange with N3- to enhance interdot coupling and control the n-doping of InP QD films. Further modifying the QD surface with thin, thermally evaporated Se overlayers yields FETs with an average electron mobility of 0.45 cm2 V-1 s-1, 10 times that of previously reported devices, and a higher on-off current ratio of 103-104. Analytical measurements suggest lower trap-state densities and longer carrier lifetimes in the Se-modified InP QD films, giving rise to a four-time longer carrier diffusion length. |
Persistent Identifier | http://hdl.handle.net/10722/319043 |
ISSN | 2023 Impact Factor: 7.2 2023 SCImago Journal Rankings: 2.421 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhao, Tianshuo | - |
dc.contributor.author | Zhao, Qinghua | - |
dc.contributor.author | Lee, Jaeyoung | - |
dc.contributor.author | Yang, Shengsong | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Chuang, Ming Yuan | - |
dc.contributor.author | He, Yulian | - |
dc.contributor.author | Thompson, Sarah M. | - |
dc.contributor.author | Liu, Guannan | - |
dc.contributor.author | Oh, Nuri | - |
dc.contributor.author | Murray, Christopher B. | - |
dc.contributor.author | Kagan, Cherie R. | - |
dc.date.accessioned | 2022-10-11T12:25:08Z | - |
dc.date.available | 2022-10-11T12:25:08Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | Chemistry of Materials, 2022, v, 34 n. 18, p. 8306-8315 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | http://hdl.handle.net/10722/319043 | - |
dc.description.abstract | Colloidal InP quantum dots (QDs) have emerged as potential candidates for constructing nontoxic QD-based optoelectronic devices. However, charge transport in InP QD thin-film assemblies has been limitedly explored. Herein, we report the synthesis of 8 nm edge length (6.5 nm in height), tetrahedral InP QDs and study charge transport in thin films using the platform of the field-effect transistor (FET). We design a hybrid ligand-exchange strategy that combines solution-based exchange with S2- and solid-state exchange with N3- to enhance interdot coupling and control the n-doping of InP QD films. Further modifying the QD surface with thin, thermally evaporated Se overlayers yields FETs with an average electron mobility of 0.45 cm2 V-1 s-1, 10 times that of previously reported devices, and a higher on-off current ratio of 103-104. Analytical measurements suggest lower trap-state densities and longer carrier lifetimes in the Se-modified InP QD films, giving rise to a four-time longer carrier diffusion length. | - |
dc.language | eng | - |
dc.relation.ispartof | Chemistry of Materials | - |
dc.title | Engineering the Surface Chemistry of Colloidal InP Quantum Dots for Charge Transport | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/acs.chemmater.2c01840 | - |
dc.identifier.scopus | eid_2-s2.0-85137911633 | - |
dc.identifier.volume | 34 | - |
dc.identifier.issue | 18 | - |
dc.identifier.spage | 8306 | - |
dc.identifier.epage | 8315 | - |
dc.identifier.eissn | 1520-5002 | - |
dc.identifier.isi | WOS:000855149900001 | - |