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Conference Paper: Temperature stable, narrow linewidth heterogeneously integrated semiconductor laser with Si3N4 cavity

TitleTemperature stable, narrow linewidth heterogeneously integrated semiconductor laser with Si3N4 cavity
Authors
Issue Date2020
Citation
Optics InfoBase Conference Papers, 2020, v. Part F183-CLEO-SI 2020, article no. STu3M.6 How to Cite?
AbstractWe demonstrate the first heterogeneously integrated laser with a Si3N4 external cavity. Through a multilayer heterogeneous integration with InP and Si, the laser shows narrow linewidth and high temperature stability expected from a Si3N4 cavity.
Persistent Identifierhttp://hdl.handle.net/10722/321906

 

DC FieldValueLanguage
dc.contributor.authorXiang, Chao-
dc.contributor.authorJin, Warren-
dc.contributor.authorGuo, Joel-
dc.contributor.authorPeters, Jonathan D.-
dc.contributor.authorKennedy, M. J.-
dc.contributor.authorSelvidge, Jennifer-
dc.contributor.authorMorton, Paul A.-
dc.contributor.authorBowers, John E.-
dc.date.accessioned2022-11-03T02:22:16Z-
dc.date.available2022-11-03T02:22:16Z-
dc.date.issued2020-
dc.identifier.citationOptics InfoBase Conference Papers, 2020, v. Part F183-CLEO-SI 2020, article no. STu3M.6-
dc.identifier.urihttp://hdl.handle.net/10722/321906-
dc.description.abstractWe demonstrate the first heterogeneously integrated laser with a Si3N4 external cavity. Through a multilayer heterogeneous integration with InP and Si, the laser shows narrow linewidth and high temperature stability expected from a Si3N4 cavity.-
dc.languageeng-
dc.relation.ispartofOptics InfoBase Conference Papers-
dc.titleTemperature stable, narrow linewidth heterogeneously integrated semiconductor laser with Si3N4 cavity-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1364/CLEO_SI.2020.STu3M.6-
dc.identifier.scopuseid_2-s2.0-85095434971-
dc.identifier.volumePart F183-CLEO-SI 2020-
dc.identifier.spagearticle no. STu3M.6-
dc.identifier.epagearticle no. STu3M.6-

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