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Article: Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

TitleGrowth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
Authors
KeywordsChemical vapor deposition
Field-effect transistors
Hole mobility
Substrate engineering
Tellurium
Issue Date2022
Citation
Nano-Micro Letters, 2022, v. 14, n. 1, article no. 109 How to Cite?
AbstractThe lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V−1 s−1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal–oxide–semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility [InlineMediaObject not available: see fulltext.].
Persistent Identifierhttp://hdl.handle.net/10722/329803
ISSN
2023 Impact Factor: 31.6
2023 SCImago Journal Rankings: 6.484
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, Peng-
dc.contributor.authorZha, Jiajia-
dc.contributor.authorGao, Guoyun-
dc.contributor.authorZheng, Long-
dc.contributor.authorHuang, Haoxin-
dc.contributor.authorXia, Yunpeng-
dc.contributor.authorXu, Songcen-
dc.contributor.authorXiong, Tengfei-
dc.contributor.authorZhang, Zhuomin-
dc.contributor.authorYang, Zhengbao-
dc.contributor.authorChen, Ye-
dc.contributor.authorKi, Dong Keun-
dc.contributor.authorLiou, Juin J.-
dc.contributor.authorLiao, Wugang-
dc.contributor.authorTan, Chaoliang-
dc.date.accessioned2023-08-09T03:35:26Z-
dc.date.available2023-08-09T03:35:26Z-
dc.date.issued2022-
dc.identifier.citationNano-Micro Letters, 2022, v. 14, n. 1, article no. 109-
dc.identifier.issn2311-6706-
dc.identifier.urihttp://hdl.handle.net/10722/329803-
dc.description.abstractThe lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V−1 s−1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal–oxide–semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility [InlineMediaObject not available: see fulltext.].-
dc.languageeng-
dc.relation.ispartofNano-Micro Letters-
dc.subjectChemical vapor deposition-
dc.subjectField-effect transistors-
dc.subjectHole mobility-
dc.subjectSubstrate engineering-
dc.subjectTellurium-
dc.titleGrowth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s40820-022-00852-2-
dc.identifier.scopuseid_2-s2.0-85128491230-
dc.identifier.volume14-
dc.identifier.issue1-
dc.identifier.spagearticle no. 109-
dc.identifier.epagearticle no. 109-
dc.identifier.eissn2150-5551-
dc.identifier.isiWOS:000784977100002-

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