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- Publisher Website: 10.1109/LED.2009.2016443
- Scopus: eid_2-s2.0-67349236231
- WOS: WOS:000265711700041
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Article: Graphene frequency multipliers
Title | Graphene frequency multipliers |
---|---|
Authors | |
Keywords | Frequency doublers Frequency multipliers Full-wave rectifiers Graphene field-effect transistors (G-FETs) |
Issue Date | 2009 |
Citation | IEEE Electron Device Letters, 2009, v. 30, n. 5, p. 547-549 How to Cite? |
Abstract | In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies. © 2009 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/335190 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, Han | - |
dc.contributor.author | Nezich, Daniel | - |
dc.contributor.author | Kong, Jing | - |
dc.contributor.author | Palacios, Tomas | - |
dc.date.accessioned | 2023-11-17T08:23:47Z | - |
dc.date.available | 2023-11-17T08:23:47Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2009, v. 30, n. 5, p. 547-549 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335190 | - |
dc.description.abstract | In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies. © 2009 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | Frequency doublers | - |
dc.subject | Frequency multipliers | - |
dc.subject | Full-wave rectifiers | - |
dc.subject | Graphene field-effect transistors (G-FETs) | - |
dc.title | Graphene frequency multipliers | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2009.2016443 | - |
dc.identifier.scopus | eid_2-s2.0-67349236231 | - |
dc.identifier.volume | 30 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 547 | - |
dc.identifier.epage | 549 | - |
dc.identifier.isi | WOS:000265711700041 | - |