File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Graphene frequency multipliers

TitleGraphene frequency multipliers
Authors
KeywordsFrequency doublers
Frequency multipliers
Full-wave rectifiers
Graphene field-effect transistors (G-FETs)
Issue Date2009
Citation
IEEE Electron Device Letters, 2009, v. 30, n. 5, p. 547-549 How to Cite?
AbstractIn this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335190
ISSN
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Han-
dc.contributor.authorNezich, Daniel-
dc.contributor.authorKong, Jing-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:23:47Z-
dc.date.available2023-11-17T08:23:47Z-
dc.date.issued2009-
dc.identifier.citationIEEE Electron Device Letters, 2009, v. 30, n. 5, p. 547-549-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/335190-
dc.description.abstractIn this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies. © 2009 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectFrequency doublers-
dc.subjectFrequency multipliers-
dc.subjectFull-wave rectifiers-
dc.subjectGraphene field-effect transistors (G-FETs)-
dc.titleGraphene frequency multipliers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2009.2016443-
dc.identifier.scopuseid_2-s2.0-67349236231-
dc.identifier.volume30-
dc.identifier.issue5-
dc.identifier.spage547-
dc.identifier.epage549-
dc.identifier.isiWOS:000265711700041-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats