AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications

Abstract

In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (<1%). The low R sh of 215Ω/sq was obtained with an excellent standard deviation of 1.1% across 300 wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm 2/V s and sheet charge density of 1.76×10 13/cm 2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1mm and 25 nm Al 2O 3 passivation show maximum drain current (I DS,max) of 2.36 A/mm at V GS=2V. Gate recessed devices with 0.15μm gate length and 25 nm Al 2O 3 passivation resulted in maximum transconductance (g m) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum f T is 86 GHz and f max is 91.7 GHz. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.