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Article: Graphene-based ambipolar RF mixers

TitleGraphene-based ambipolar RF mixers
Authors
KeywordsAmbipolar conduction
chemical vapor deposition (CVD) graphene
graphene field-effect transistors (GFET)
mixers
Issue Date2010
Citation
IEEE Electron Device Letters, 2010, v. 31, n. 9, p. 906-908 How to Cite?
AbstractThe combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency, linearity, and power dissipation. In this letter, we demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device. Due to the symmetrical ambipolar conduction in graphene, graphene-based mixers can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit. The mixer operation was demonstrated at a frequency of 10 MHz using graphene grown by chemical vapor deposition on a Ni film and then transferred to an insulating substrate. The maximum operating frequency was limited by the device geometry and the measurement setup, and a high-quality factor was observed with a third-order intercept point of +13.8 dBm. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335198
ISSN
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Han-
dc.contributor.authorHsu, Allen-
dc.contributor.authorWu, Justin-
dc.contributor.authorKong, Jing-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:23:52Z-
dc.date.available2023-11-17T08:23:52Z-
dc.date.issued2010-
dc.identifier.citationIEEE Electron Device Letters, 2010, v. 31, n. 9, p. 906-908-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/335198-
dc.description.abstractThe combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency, linearity, and power dissipation. In this letter, we demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device. Due to the symmetrical ambipolar conduction in graphene, graphene-based mixers can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit. The mixer operation was demonstrated at a frequency of 10 MHz using graphene grown by chemical vapor deposition on a Ni film and then transferred to an insulating substrate. The maximum operating frequency was limited by the device geometry and the measurement setup, and a high-quality factor was observed with a third-order intercept point of +13.8 dBm. © 2010 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectAmbipolar conduction-
dc.subjectchemical vapor deposition (CVD) graphene-
dc.subjectgraphene field-effect transistors (GFET)-
dc.subjectmixers-
dc.titleGraphene-based ambipolar RF mixers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2010.2052017-
dc.identifier.scopuseid_2-s2.0-77956173102-
dc.identifier.volume31-
dc.identifier.issue9-
dc.identifier.spage906-
dc.identifier.epage908-
dc.identifier.isiWOS:000283185500002-

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