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Article: Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance

TitleAl<inf>2</inf>O<inf>3</inf> passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance
Authors
Wang, HanChung, Jinwook W.Gao, XiangGuo, ShipingPalacios, Tomas
KeywordsElectrical properties
HEMTs
InAlN/GaN heterojunctions
MOCVD
Passivation
Performance
Issue Date2010
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, 2010, v. 7, n. 10, p. 2440-2444 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.200983899
AbstractIn this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative to SixNy passivation. The fabricated devices give record maximum drain current density and transconductance. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Persistent Identifierhttp://hdl.handle.net/10722/335201
ISSN
1862-6351
2020 SCImago Journal Rankings: 0.210

 

DC FieldValueLanguage
dc.contributor.authorWang, Han-
dc.contributor.authorChung, Jinwook W.-
dc.contributor.authorGao, Xiang-
dc.contributor.authorGuo, Shiping-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:23:54Z-
dc.date.available2023-11-17T08:23:54Z-
dc.date.issued2010-
dc.identifier.citationPhysica Status Solidi (C) Current Topics in Solid State Physics, 2010, v. 7, n. 10, p. 2440-2444-
dc.identifier.issn1862-6351-
dc.identifier.urihttp://hdl.handle.net/10722/335201-
dc.description.abstractIn this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative to SixNy passivation. The fabricated devices give record maximum drain current density and transconductance. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageeng-
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physics-
dc.subjectElectrical properties-
dc.subjectHEMTs-
dc.subjectInAlN/GaN heterojunctions-
dc.subjectMOCVD-
dc.subjectPassivation-
dc.subjectPerformance-
dc.titleAl<inf>2</inf>O<inf>3</inf> passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200983899-
dc.identifier.scopuseid_2-s2.0-78449235159-
dc.identifier.volume7-
dc.identifier.issue10-
dc.identifier.spage2440-
dc.identifier.epage2444-
dc.identifier.eissn1610-1642-

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