File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/IEDM.2010.5703423
- Scopus: eid_2-s2.0-79951840098
- Find via
Supplementary
-
Citations:
- Scopus: 0
- Appears in Collections:
Conference Paper: Gigahertz ambipolar frequency multiplier based on CVD graphene
| Title | Gigahertz ambipolar frequency multiplier based on CVD graphene |
|---|---|
| Authors | |
| Issue Date | 2010 |
| Citation | Technical Digest - International Electron Devices Meeting, IEDM, 2010, article no. 5703423 How to Cite? |
| Abstract | Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (> 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications. ©2010 IEEE. |
| Persistent Identifier | http://hdl.handle.net/10722/335206 |
| ISSN | 2023 SCImago Journal Rankings: 1.047 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wang, Han | - |
| dc.contributor.author | Hsu, Allen | - |
| dc.contributor.author | Kim, Ki Kang | - |
| dc.contributor.author | Kong, Jing | - |
| dc.contributor.author | Palacios, Tomás | - |
| dc.date.accessioned | 2023-11-17T08:23:56Z | - |
| dc.date.available | 2023-11-17T08:23:56Z | - |
| dc.date.issued | 2010 | - |
| dc.identifier.citation | Technical Digest - International Electron Devices Meeting, IEDM, 2010, article no. 5703423 | - |
| dc.identifier.issn | 0163-1918 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/335206 | - |
| dc.description.abstract | Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (> 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications. ©2010 IEEE. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Technical Digest - International Electron Devices Meeting, IEDM | - |
| dc.title | Gigahertz ambipolar frequency multiplier based on CVD graphene | - |
| dc.type | Conference_Paper | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1109/IEDM.2010.5703423 | - |
| dc.identifier.scopus | eid_2-s2.0-79951840098 | - |
| dc.identifier.spage | article no. 5703423 | - |
| dc.identifier.epage | article no. 5703423 | - |