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Article: Compact virtual-source currentvoltage model for top-and back-gated graphene field-effect transistors

TitleCompact virtual-source currentvoltage model for top-and back-gated graphene field-effect transistors
Authors
KeywordsAmbipolar transport
device model
graphene field-effect transistors (GFETs)
virtual-source carrier injection velocity
Issue Date2011
Citation
IEEE Transactions on Electron Devices, 2011, v. 58, n. 5, p. 1523-1533 How to Cite?
AbstractThis paper presents a compact model for the currentvoltage characteristics of graphene field-effect transistors (GFETs), which is based on an extension of the virtual-source model previously proposed for Si MOSFETs and is valid for both saturation and nonsaturation regions of device operation. This GFET virtual-source model provides a simple and intuitive understanding of carrier transport in GFETs, allowing extraction of the virtual-source injection velocity vVS, which is a physical parameter with great technological significance for short-channel graphene transistors. The derived IV characteristics account for the combined effects of the drainsource voltage VDS, the top-gate voltage VTGS, and the back-gate voltage VBGS. With only a small set of fitting parameters, the model shows excellent agreement with experimental data. It is also shown that the extracted virtual-source carrier injection velocity for graphene devices is much higher than in Si MOSFETs and state-of-the-art IIIV heterostructure FETs with similar gate length, demonstrating the great potential of GFETs for high-frequency applications. Comparison with experimental data for chemical-vapor-deposited GFETs from our group and epitaxial GFETs in the literature confirms the validity and flexibility of the model for a wide range of existing GFET devices. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335207
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Han-
dc.contributor.authorHsu, Allen-
dc.contributor.authorKong, Jing-
dc.contributor.authorAntoniadis, Dimitri A.-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:23:56Z-
dc.date.available2023-11-17T08:23:56Z-
dc.date.issued2011-
dc.identifier.citationIEEE Transactions on Electron Devices, 2011, v. 58, n. 5, p. 1523-1533-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/335207-
dc.description.abstractThis paper presents a compact model for the currentvoltage characteristics of graphene field-effect transistors (GFETs), which is based on an extension of the virtual-source model previously proposed for Si MOSFETs and is valid for both saturation and nonsaturation regions of device operation. This GFET virtual-source model provides a simple and intuitive understanding of carrier transport in GFETs, allowing extraction of the virtual-source injection velocity vVS, which is a physical parameter with great technological significance for short-channel graphene transistors. The derived IV characteristics account for the combined effects of the drainsource voltage VDS, the top-gate voltage VTGS, and the back-gate voltage VBGS. With only a small set of fitting parameters, the model shows excellent agreement with experimental data. It is also shown that the extracted virtual-source carrier injection velocity for graphene devices is much higher than in Si MOSFETs and state-of-the-art IIIV heterostructure FETs with similar gate length, demonstrating the great potential of GFETs for high-frequency applications. Comparison with experimental data for chemical-vapor-deposited GFETs from our group and epitaxial GFETs in the literature confirms the validity and flexibility of the model for a wide range of existing GFET devices. © 2010 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectAmbipolar transport-
dc.subjectdevice model-
dc.subjectgraphene field-effect transistors (GFETs)-
dc.subjectvirtual-source carrier injection velocity-
dc.titleCompact virtual-source currentvoltage model for top-and back-gated graphene field-effect transistors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2011.2118759-
dc.identifier.scopuseid_2-s2.0-79955548348-
dc.identifier.volume58-
dc.identifier.issue5-
dc.identifier.spage1523-
dc.identifier.epage1533-
dc.identifier.isiWOS:000289952800034-

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