File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: BN/Graphene/BN transistors for RF applications

TitleBN/Graphene/BN transistors for RF applications
Authors
Wang, HanTaychatanapat, ThitiHsu, AllenWatanabe, KenjiTaniguchi, TakashiJarillo-Herrero, PabloPalacios, Tomas
KeywordsGraphene field-effect transistors (GFETs)
hexagonal boron nitride (hBN)
radio frequency (RF)
Issue Date2011
Citation
IEEE Electron Device Letters, 2011, v. 32, n. 9, p. 1209-1211 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2011.2160611
AbstractIn this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335211
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000294171600015

 

DC FieldValueLanguage
dc.contributor.authorWang, Han-
dc.contributor.authorTaychatanapat, Thiti-
dc.contributor.authorHsu, Allen-
dc.contributor.authorWatanabe, Kenji-
dc.contributor.authorTaniguchi, Takashi-
dc.contributor.authorJarillo-Herrero, Pablo-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:23:58Z-
dc.date.available2023-11-17T08:23:58Z-
dc.date.issued2011-
dc.identifier.citationIEEE Electron Device Letters, 2011, v. 32, n. 9, p. 1209-1211-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/335211-
dc.description.abstractIn this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics. © 2011 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectGraphene field-effect transistors (GFETs)-
dc.subjecthexagonal boron nitride (hBN)-
dc.subjectradio frequency (RF)-
dc.titleBN/Graphene/BN transistors for RF applications-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2011.2160611-
dc.identifier.scopuseid_2-s2.0-80052023775-
dc.identifier.volume32-
dc.identifier.issue9-
dc.identifier.spage1209-
dc.identifier.epage1211-
dc.identifier.isiWOS:000294171600015-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats