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Conference Paper: Graphene electronics for RF applications

TitleGraphene electronics for RF applications
Authors
Keywordschemical vapor deposition
frequency multiplier
graphene
RF applications
Issue Date2011
Citation
IEEE MTT-S International Microwave Symposium Digest, 2011, article no. 5972917 How to Cite?
AbstractGraphene, a one-atom-thick layer of carbon atoms arranged in a honeycomb lattice, has recently attracted great interest among physicists and engineers. The combination of the unique properties of this material, with new device concepts and nanotechnology may overcome some of the main limitations of traditional radio-frequency (RF) electronics in terms of maximum frequency, linearity and power dissipation. In this paper, we review the recent progress on graphene-based electronic devices for RF applications. In particular, the growth and technology of graphene transistors with an fT.L G product of 24 GHz.μm will be discussed. These devices have shown excellent potential for high speed RF applications and frequency multiplier circuits with cut-off frequencies of more than 1.4 GHz have been demonstrated. The future challenges facing this rising technology and its feasibility for a new generation of applications in RF communications and circuits are also discussed. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335212
ISSN
2023 SCImago Journal Rankings: 0.504

 

DC FieldValueLanguage
dc.contributor.authorWang, Han-
dc.contributor.authorHsu, Allen-
dc.contributor.authorKim, Ki Kang-
dc.contributor.authorKong, Jing-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:23:59Z-
dc.date.available2023-11-17T08:23:59Z-
dc.date.issued2011-
dc.identifier.citationIEEE MTT-S International Microwave Symposium Digest, 2011, article no. 5972917-
dc.identifier.issn0149-645X-
dc.identifier.urihttp://hdl.handle.net/10722/335212-
dc.description.abstractGraphene, a one-atom-thick layer of carbon atoms arranged in a honeycomb lattice, has recently attracted great interest among physicists and engineers. The combination of the unique properties of this material, with new device concepts and nanotechnology may overcome some of the main limitations of traditional radio-frequency (RF) electronics in terms of maximum frequency, linearity and power dissipation. In this paper, we review the recent progress on graphene-based electronic devices for RF applications. In particular, the growth and technology of graphene transistors with an fT.L G product of 24 GHz.μm will be discussed. These devices have shown excellent potential for high speed RF applications and frequency multiplier circuits with cut-off frequencies of more than 1.4 GHz have been demonstrated. The future challenges facing this rising technology and its feasibility for a new generation of applications in RF communications and circuits are also discussed. © 2011 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE MTT-S International Microwave Symposium Digest-
dc.subjectchemical vapor deposition-
dc.subjectfrequency multiplier-
dc.subjectgraphene-
dc.subjectRF applications-
dc.titleGraphene electronics for RF applications-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/MWSYM.2011.5972917-
dc.identifier.scopuseid_2-s2.0-80052327305-
dc.identifier.spagearticle no. 5972917-
dc.identifier.epagearticle no. 5972917-

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