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- Publisher Website: 10.1109/MWSYM.2011.5972917
- Scopus: eid_2-s2.0-80052327305
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Conference Paper: Graphene electronics for RF applications
Title | Graphene electronics for RF applications |
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Authors | |
Keywords | chemical vapor deposition frequency multiplier graphene RF applications |
Issue Date | 2011 |
Citation | IEEE MTT-S International Microwave Symposium Digest, 2011, article no. 5972917 How to Cite? |
Abstract | Graphene, a one-atom-thick layer of carbon atoms arranged in a honeycomb lattice, has recently attracted great interest among physicists and engineers. The combination of the unique properties of this material, with new device concepts and nanotechnology may overcome some of the main limitations of traditional radio-frequency (RF) electronics in terms of maximum frequency, linearity and power dissipation. In this paper, we review the recent progress on graphene-based electronic devices for RF applications. In particular, the growth and technology of graphene transistors with an fT.L G product of 24 GHz.μm will be discussed. These devices have shown excellent potential for high speed RF applications and frequency multiplier circuits with cut-off frequencies of more than 1.4 GHz have been demonstrated. The future challenges facing this rising technology and its feasibility for a new generation of applications in RF communications and circuits are also discussed. © 2011 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/335212 |
ISSN | 2023 SCImago Journal Rankings: 0.504 |
DC Field | Value | Language |
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dc.contributor.author | Wang, Han | - |
dc.contributor.author | Hsu, Allen | - |
dc.contributor.author | Kim, Ki Kang | - |
dc.contributor.author | Kong, Jing | - |
dc.contributor.author | Palacios, Tomas | - |
dc.date.accessioned | 2023-11-17T08:23:59Z | - |
dc.date.available | 2023-11-17T08:23:59Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | IEEE MTT-S International Microwave Symposium Digest, 2011, article no. 5972917 | - |
dc.identifier.issn | 0149-645X | - |
dc.identifier.uri | http://hdl.handle.net/10722/335212 | - |
dc.description.abstract | Graphene, a one-atom-thick layer of carbon atoms arranged in a honeycomb lattice, has recently attracted great interest among physicists and engineers. The combination of the unique properties of this material, with new device concepts and nanotechnology may overcome some of the main limitations of traditional radio-frequency (RF) electronics in terms of maximum frequency, linearity and power dissipation. In this paper, we review the recent progress on graphene-based electronic devices for RF applications. In particular, the growth and technology of graphene transistors with an fT.L G product of 24 GHz.μm will be discussed. These devices have shown excellent potential for high speed RF applications and frequency multiplier circuits with cut-off frequencies of more than 1.4 GHz have been demonstrated. The future challenges facing this rising technology and its feasibility for a new generation of applications in RF communications and circuits are also discussed. © 2011 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE MTT-S International Microwave Symposium Digest | - |
dc.subject | chemical vapor deposition | - |
dc.subject | frequency multiplier | - |
dc.subject | graphene | - |
dc.subject | RF applications | - |
dc.title | Graphene electronics for RF applications | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/MWSYM.2011.5972917 | - |
dc.identifier.scopus | eid_2-s2.0-80052327305 | - |
dc.identifier.spage | article no. 5972917 | - |
dc.identifier.epage | article no. 5972917 | - |