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Article: Large-area 2-D electronics: Materials, technology, and devices

TitleLarge-area 2-D electronics: Materials, technology, and devices
Authors
KeywordsBoron nitride (BN)
circuits
graphene
transistors
Issue Date2013
Citation
Proceedings of the IEEE, 2013, v. 101, n. 7, p. 1638-1652 How to Cite?
AbstractRecent experiments since the discovery of monolayer graphite or graphene have led to an exciting revival in the interest in the electronic applications for graphene, as well as other 2-D materials such as hexagonal boron nitride (hBN) and molybdenum disulfide (MoS2 ). These layered materials serve as an exciting new platform for flexible and transparent electronics where surfaces can be enriched with new functionality. This paper aims to provide an overview behind these new class of materials ranging upon important issues for electronic integration including synthesis all the way to current state-of-the-art circuits and devices made from these materials. © 1963-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335228
ISSN
2021 Impact Factor: 14.910
2020 SCImago Journal Rankings: 2.383

 

DC FieldValueLanguage
dc.contributor.authorHsu, Allen-
dc.contributor.authorWang, Han-
dc.contributor.authorShin, Yong Cheol-
dc.contributor.authorMailly, Benjamin-
dc.contributor.authorZhang, Xu-
dc.contributor.authorYu, Lili-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorLee, Yi Hsien-
dc.contributor.authorDubey, Madan-
dc.contributor.authorKim, Ki Kang-
dc.contributor.authorKong, Jing-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:24:06Z-
dc.date.available2023-11-17T08:24:06Z-
dc.date.issued2013-
dc.identifier.citationProceedings of the IEEE, 2013, v. 101, n. 7, p. 1638-1652-
dc.identifier.issn0018-9219-
dc.identifier.urihttp://hdl.handle.net/10722/335228-
dc.description.abstractRecent experiments since the discovery of monolayer graphite or graphene have led to an exciting revival in the interest in the electronic applications for graphene, as well as other 2-D materials such as hexagonal boron nitride (hBN) and molybdenum disulfide (MoS2 ). These layered materials serve as an exciting new platform for flexible and transparent electronics where surfaces can be enriched with new functionality. This paper aims to provide an overview behind these new class of materials ranging upon important issues for electronic integration including synthesis all the way to current state-of-the-art circuits and devices made from these materials. © 1963-2012 IEEE.-
dc.languageeng-
dc.relation.ispartofProceedings of the IEEE-
dc.subjectBoron nitride (BN)-
dc.subjectcircuits-
dc.subjectgraphene-
dc.subjecttransistors-
dc.titleLarge-area 2-D electronics: Materials, technology, and devices-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/JPROC.2013.2251311-
dc.identifier.scopuseid_2-s2.0-84879883900-
dc.identifier.volume101-
dc.identifier.issue7-
dc.identifier.spage1638-
dc.identifier.epage1652-

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