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Article: Nanowire channel InAlN/GaN HEMTs with high linearity of gm and fT

TitleNanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf>
Authors
KeywordsGaN
high-electron-mobility transistor (HEMT)
nanowire
nonlinear access resistance
Issue Date2013
Citation
IEEE Electron Device Letters, 2013, v. 34, n. 8, p. 969-971 How to Cite?
AbstractThis letter reports a high linearity InAlN/GaN high-electron-mobility transistor (HEMT) with a nanowire channel structure. It is found that the increase of source access resistance with drain current severely limits the linearity of GaN HEMTs. By increasing the ratio of the source access region width to that of the channel, the transistor access region has a larger current drivability than the channel region, which enables the source access region to behave more like an ideal source. The suppression of the increase in source access resistance with current provides a flat transconductance (gm) at high drain current even in sub-100-nm short-channel devices. In addition, the constant source resistance allows a higher effective gate voltage overdrive, which enables a higher drain current density (>3.5/mm) in the intrinsic device. The new devices also show very flat current-gain cutoff frequency (fT) as a function of gate voltage. These results highlight the importance of the source access region in limiting the maximum current density and the linearity of GaN HEMTs. © 1980-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/335229
ISSN
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLee, Dong Seup-
dc.contributor.authorWang, Han-
dc.contributor.authorHsu, Allen-
dc.contributor.authorAzize, Mohamed-
dc.contributor.authorLaboutin, Oleg-
dc.contributor.authorCao, Yu-
dc.contributor.authorJohnson, Jerry Wayne-
dc.contributor.authorBeam, Edward-
dc.contributor.authorKetterson, Andrew-
dc.contributor.authorSchuette, Michael L.-
dc.contributor.authorSaunier, Paul-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:24:07Z-
dc.date.available2023-11-17T08:24:07Z-
dc.date.issued2013-
dc.identifier.citationIEEE Electron Device Letters, 2013, v. 34, n. 8, p. 969-971-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/335229-
dc.description.abstractThis letter reports a high linearity InAlN/GaN high-electron-mobility transistor (HEMT) with a nanowire channel structure. It is found that the increase of source access resistance with drain current severely limits the linearity of GaN HEMTs. By increasing the ratio of the source access region width to that of the channel, the transistor access region has a larger current drivability than the channel region, which enables the source access region to behave more like an ideal source. The suppression of the increase in source access resistance with current provides a flat transconductance (gm) at high drain current even in sub-100-nm short-channel devices. In addition, the constant source resistance allows a higher effective gate voltage overdrive, which enables a higher drain current density (>3.5/mm) in the intrinsic device. The new devices also show very flat current-gain cutoff frequency (fT) as a function of gate voltage. These results highlight the importance of the source access region in limiting the maximum current density and the linearity of GaN HEMTs. © 1980-2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectGaN-
dc.subjecthigh-electron-mobility transistor (HEMT)-
dc.subjectnanowire-
dc.subjectnonlinear access resistance-
dc.titleNanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf>-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2013.2261913-
dc.identifier.scopuseid_2-s2.0-84880989000-
dc.identifier.volume34-
dc.identifier.issue8-
dc.identifier.spage969-
dc.identifier.epage971-
dc.identifier.isiWOS:000323911800012-

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