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Article: Impact of chlorine functionalization on high-mobility chemical vapor deposition grown graphene

TitleImpact of chlorine functionalization on high-mobility chemical vapor deposition grown graphene
Authors
Keywordschlorination
controllability
coverage
functionalization
graphene
mobility
Raman spectroscopy
Issue Date2013
Citation
ACS Nano, 2013, v. 7, n. 8, p. 7262-7270 How to Cite?
AbstractWe systematically investigated plasma-based chlorination of graphene and compared its properties before and after such treatment. X-ray photoelectron spectroscopy revealed that a high Cl coverage of 45.3% (close to C 2Cl), together with a high mobility of 1535 cm2/(V s), was achieved. The C:Cl ratio n (CnCl) can be effectively tuned by controlling the dc bias and treatment time in the plasma chamber. Chlorinated graphene field-effect transistors were fabricated, and subsequent Hall-effect measurements showed that the hole carrier concentration in the chlorinated graphene can be increased roughly by a factor of 3. Raman spectra indicated that the bonding type between Cl and graphene depends sensitively on the dc bias applied in the plasma chamber during chlorination and can therefore be engineered into different reaction regimes, such as ionic bonding, covalent bonding, and defect creation. Micro-Raman mapping showed that the plasma-based chlorination process is a uniform process on the micrometer scale. © 2013 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/335230
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Xu-
dc.contributor.authorHsu, Allen-
dc.contributor.authorWang, Han-
dc.contributor.authorSong, Yi-
dc.contributor.authorKong, Jing-
dc.contributor.authorDresselhaus, Mildred S.-
dc.contributor.authorPalacios, Tomás-
dc.date.accessioned2023-11-17T08:24:07Z-
dc.date.available2023-11-17T08:24:07Z-
dc.date.issued2013-
dc.identifier.citationACS Nano, 2013, v. 7, n. 8, p. 7262-7270-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/335230-
dc.description.abstractWe systematically investigated plasma-based chlorination of graphene and compared its properties before and after such treatment. X-ray photoelectron spectroscopy revealed that a high Cl coverage of 45.3% (close to C 2Cl), together with a high mobility of 1535 cm2/(V s), was achieved. The C:Cl ratio n (CnCl) can be effectively tuned by controlling the dc bias and treatment time in the plasma chamber. Chlorinated graphene field-effect transistors were fabricated, and subsequent Hall-effect measurements showed that the hole carrier concentration in the chlorinated graphene can be increased roughly by a factor of 3. Raman spectra indicated that the bonding type between Cl and graphene depends sensitively on the dc bias applied in the plasma chamber during chlorination and can therefore be engineered into different reaction regimes, such as ionic bonding, covalent bonding, and defect creation. Micro-Raman mapping showed that the plasma-based chlorination process is a uniform process on the micrometer scale. © 2013 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectchlorination-
dc.subjectcontrollability-
dc.subjectcoverage-
dc.subjectfunctionalization-
dc.subjectgraphene-
dc.subjectmobility-
dc.subjectRaman spectroscopy-
dc.titleImpact of chlorine functionalization on high-mobility chemical vapor deposition grown graphene-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nn4026756-
dc.identifier.scopuseid_2-s2.0-84883240093-
dc.identifier.volume7-
dc.identifier.issue8-
dc.identifier.spage7262-
dc.identifier.epage7270-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000323810600091-

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