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Conference Paper: High performance InAlN/GaN HEMTs on sic substrate
| Title | High performance InAlN/GaN HEMTs on sic substrate |
|---|---|
| Authors | |
| Keywords | Compound semiconductor High electron mobility transistors(HEMT) InAlN/GaN |
| Issue Date | 2010 |
| Citation | 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010 How to Cite? |
| Abstract | In this work, we study the scaling characteristics of In 0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative to SixNy passivation. The fabricated devices give record maximum drain current density and transconductance. |
| Persistent Identifier | http://hdl.handle.net/10722/335232 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wang, Han | - |
| dc.contributor.author | Chung, Jinwook W. | - |
| dc.contributor.author | Gao, Xiang | - |
| dc.contributor.author | Guo, Shiping | - |
| dc.contributor.author | Palacios, Tomas | - |
| dc.date.accessioned | 2023-11-17T08:24:09Z | - |
| dc.date.available | 2023-11-17T08:24:09Z | - |
| dc.date.issued | 2010 | - |
| dc.identifier.citation | 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/335232 | - |
| dc.description.abstract | In this work, we study the scaling characteristics of In 0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as an alternative to SixNy passivation. The fabricated devices give record maximum drain current density and transconductance. | - |
| dc.language | eng | - |
| dc.relation.ispartof | 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010 | - |
| dc.subject | Compound semiconductor | - |
| dc.subject | High electron mobility transistors(HEMT) | - |
| dc.subject | InAlN/GaN | - |
| dc.title | High performance InAlN/GaN HEMTs on sic substrate | - |
| dc.type | Conference_Paper | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.scopus | eid_2-s2.0-84887331048 | - |