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Conference Paper: High linearity nanowire channel GaN HEMTs

TitleHigh linearity nanowire channel GaN HEMTs
Authors
Lee, Dong SeupWang, HanHsu, AllenAzize, MohamedLaboutin, OlegCao, YuJohnson, WayneBeam, EdwardKetterson, AndrewSchuette, MichaelSaunier, PaulPalacios, Tomas
Issue Date2013
Citation
Device Research Conference - Conference Digest, DRC, 2013, p. 195-196 How to Cite?
DOI: http://dx.doi.org/10.1109/DRC.2013.6633860
Persistent Identifierhttp://hdl.handle.net/10722/335233
ISSN
1548-3770
2020 SCImago Journal Rankings: 0.222

 

DC FieldValueLanguage
dc.contributor.authorLee, Dong Seup-
dc.contributor.authorWang, Han-
dc.contributor.authorHsu, Allen-
dc.contributor.authorAzize, Mohamed-
dc.contributor.authorLaboutin, Oleg-
dc.contributor.authorCao, Yu-
dc.contributor.authorJohnson, Wayne-
dc.contributor.authorBeam, Edward-
dc.contributor.authorKetterson, Andrew-
dc.contributor.authorSchuette, Michael-
dc.contributor.authorSaunier, Paul-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2023-11-17T08:24:09Z-
dc.date.available2023-11-17T08:24:09Z-
dc.date.issued2013-
dc.identifier.citationDevice Research Conference - Conference Digest, DRC, 2013, p. 195-196-
dc.identifier.issn1548-3770-
dc.identifier.urihttp://hdl.handle.net/10722/335233-
dc.languageeng-
dc.relation.ispartofDevice Research Conference - Conference Digest, DRC-
dc.titleHigh linearity nanowire channel GaN HEMTs-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/DRC.2013.6633860-
dc.identifier.scopuseid_2-s2.0-84890090025-
dc.identifier.spage195-
dc.identifier.epage196-

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