File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/IEDM.2013.6724568
- Scopus: eid_2-s2.0-84894352626
- Find via
Supplementary
-
Citations:
- Scopus: 0
- Appears in Collections:
Conference Paper: A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration
Title | A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration |
---|---|
Authors | |
Issue Date | 2013 |
Citation | Technical Digest - International Electron Devices Meeting, IEDM, 2013, article no. 6724568 How to Cite? |
Abstract | This paper presents a compact virtual source (VS) model to describe carrier transport valid in both unipolar and ambipolar transport regimes in quasi-ballistic graphene field-effect transistors (GFETs). The model formulation allows for an easy extension to bilayer graphene transistors, where a bandgap can be opened. The model also includes descriptions of intrinsic terminal charges/capacitances obtained self-consistently with the transport formulation. The charge model extends from drift-diffusive transport regime to ballistic transport regime, where gradual-channel approximation (GCA) fails. The model is calibrated exhaustively against DC and S-parameter measurements of GFETs. To demonstrate the model capability for circuit-level simulations, the Verilog-A implementation of the model is used to simulate the dynamic response of frequency doubling circuits with GFETs operating in the ambipolar regime. © 2013 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/335235 |
ISSN | 2023 SCImago Journal Rankings: 1.047 |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rakheja, Shaloo | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Palacios, Tomas | - |
dc.contributor.author | Meric, Inanc | - |
dc.contributor.author | Shepard, Kenneth | - |
dc.contributor.author | Antoniadis, Dimitri | - |
dc.date.accessioned | 2023-11-17T08:24:10Z | - |
dc.date.available | 2023-11-17T08:24:10Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Technical Digest - International Electron Devices Meeting, IEDM, 2013, article no. 6724568 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335235 | - |
dc.description.abstract | This paper presents a compact virtual source (VS) model to describe carrier transport valid in both unipolar and ambipolar transport regimes in quasi-ballistic graphene field-effect transistors (GFETs). The model formulation allows for an easy extension to bilayer graphene transistors, where a bandgap can be opened. The model also includes descriptions of intrinsic terminal charges/capacitances obtained self-consistently with the transport formulation. The charge model extends from drift-diffusive transport regime to ballistic transport regime, where gradual-channel approximation (GCA) fails. The model is calibrated exhaustively against DC and S-parameter measurements of GFETs. To demonstrate the model capability for circuit-level simulations, the Verilog-A implementation of the model is used to simulate the dynamic response of frequency doubling circuits with GFETs operating in the ambipolar regime. © 2013 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | Technical Digest - International Electron Devices Meeting, IEDM | - |
dc.title | A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IEDM.2013.6724568 | - |
dc.identifier.scopus | eid_2-s2.0-84894352626 | - |
dc.identifier.spage | article no. 6724568 | - |
dc.identifier.epage | article no. 6724568 | - |