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- Publisher Website: 10.1038/ncomms5458
- Scopus: eid_2-s2.0-84904707277
- WOS: WOS:000340623400003
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Article: Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
Title | Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics |
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Authors | |
Issue Date | 2014 |
Citation | Nature Communications, 2014, v. 5, article no. 4458 How to Cite? |
Abstract | Graphene and transition metal dichalcogenides (TMDCs) are the two major types of layered materials under intensive investigation. However, the zero-bandgap nature of graphene and the relatively low mobility in TMDCs limit their applications. Here we reintroduce black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, to the layered-material family. For 15-nm-thick BP, we measure a Hall mobility of 1,000 and 600cm-2V-1s-1 for holes along the light (x) and heavy (y) effective mass directions at 120 K. BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5μm. Field-effect transistors using 5nm BP along x direction exhibit an on-off current ratio exceeding 105, a field-effect mobility of 205 cm2V-1s-1, and good current saturation characteristics all at room temperature. BP shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable. © 2014 Macmillan Publishers Limited. |
Persistent Identifier | http://hdl.handle.net/10722/335241 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Xia, Fengnian | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Jia, Yichen | - |
dc.date.accessioned | 2023-11-17T08:24:13Z | - |
dc.date.available | 2023-11-17T08:24:13Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Nature Communications, 2014, v. 5, article no. 4458 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335241 | - |
dc.description.abstract | Graphene and transition metal dichalcogenides (TMDCs) are the two major types of layered materials under intensive investigation. However, the zero-bandgap nature of graphene and the relatively low mobility in TMDCs limit their applications. Here we reintroduce black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, to the layered-material family. For 15-nm-thick BP, we measure a Hall mobility of 1,000 and 600cm-2V-1s-1 for holes along the light (x) and heavy (y) effective mass directions at 120 K. BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5μm. Field-effect transistors using 5nm BP along x direction exhibit an on-off current ratio exceeding 105, a field-effect mobility of 205 cm2V-1s-1, and good current saturation characteristics all at room temperature. BP shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable. © 2014 Macmillan Publishers Limited. | - |
dc.language | eng | - |
dc.relation.ispartof | Nature Communications | - |
dc.title | Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1038/ncomms5458 | - |
dc.identifier.scopus | eid_2-s2.0-84904707277 | - |
dc.identifier.volume | 5 | - |
dc.identifier.spage | article no. 4458 | - |
dc.identifier.epage | article no. 4458 | - |
dc.identifier.eissn | 2041-1723 | - |
dc.identifier.isi | WOS:000340623400003 | - |