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Article: Efficient electrical control of thin-film black phosphorus bandgap

TitleEfficient electrical control of thin-film black phosphorus bandgap
Authors
Issue Date2017
Citation
Nature Communications, 2017, v. 8, article no. 14474 How to Cite?
AbstractRecently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometre is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we reveal the unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10 nm-Thick black phosphorus, we continuously tune its bandgap from ∼ 300 to below 50 meV, using a moderate displacement field up to 1.1 V nm 1. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and semimetals.
Persistent Identifierhttp://hdl.handle.net/10722/335287
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorDeng, Bingchen-
dc.contributor.authorTran, Vy-
dc.contributor.authorXie, Yujun-
dc.contributor.authorJiang, Hao-
dc.contributor.authorLi, Cheng-
dc.contributor.authorGuo, Qiushi-
dc.contributor.authorWang, Xiaomu-
dc.contributor.authorTian, He-
dc.contributor.authorKoester, Steven J.-
dc.contributor.authorWang, Han-
dc.contributor.authorCha, Judy J.-
dc.contributor.authorXia, Qiangfei-
dc.contributor.authorYang, Li-
dc.contributor.authorXia, Fengnian-
dc.date.accessioned2023-11-17T08:24:37Z-
dc.date.available2023-11-17T08:24:37Z-
dc.date.issued2017-
dc.identifier.citationNature Communications, 2017, v. 8, article no. 14474-
dc.identifier.urihttp://hdl.handle.net/10722/335287-
dc.description.abstractRecently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometre is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we reveal the unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10 nm-Thick black phosphorus, we continuously tune its bandgap from ∼ 300 to below 50 meV, using a moderate displacement field up to 1.1 V nm 1. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and semimetals.-
dc.languageeng-
dc.relation.ispartofNature Communications-
dc.titleEfficient electrical control of thin-film black phosphorus bandgap-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/ncomms14474-
dc.identifier.pmid28422160-
dc.identifier.scopuseid_2-s2.0-85017644175-
dc.identifier.volume8-
dc.identifier.spagearticle no. 14474-
dc.identifier.epagearticle no. 14474-
dc.identifier.eissn2041-1723-
dc.identifier.isiWOS:000399523600001-

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