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Article: Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

TitleAtomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits
Authors
Keywords2-D material
attoJoule energy dissipation
conductive bridge (CB) random access memory (CBRAM)
Monte Carlo (MC)
nonvolatile memory
Issue Date2018
Citation
IEEE Transactions on Electron Devices, 2018, v. 65, n. 10, p. 4160-4166 How to Cite?
AbstractReducing the energy and power dissipation of conductive bridge random access memory (CBRAM) cells is of critical importance for their applications in future Internet of Things (IoT) device and neuromorphic computing platforms. Atomically thin CBRAMs enabled by 2-D materials are studied theoretically by using 3-D kinetic Monte Carlo simulations together with experimental characterization. The results indicate the performance potential of attoJoule energy dissipation for intrinsic filament formation and a filament size of a single atomistic chain in such a CBRAM cell. The atomically thin CBRAM cells also show qualitatively different features from conventional CBRAM cells, including complete rupture of the filament in the reset stage and comparable forming and set voltages. The scaling and variability of the CBRAM cells down to sub-nanometer size of the switching layer as realized in the experiment are systematically studied, which indicates performance improvement and increased relative variability as the switching layer scales down. The results establish the ultimate limits of the size and energy scaling for CBRAM cells and illustrate the unique application of 2-D materials in ultralow power memory devices.
Persistent Identifierhttp://hdl.handle.net/10722/335308
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorDong, Zhipeng-
dc.contributor.authorZhao, Huan-
dc.contributor.authorDIMarzio, Don-
dc.contributor.authorHan, Myung Geun-
dc.contributor.authorZhang, Lihua-
dc.contributor.authorTice, Jesse-
dc.contributor.authorWang, Han-
dc.contributor.authorGuo, Jing-
dc.date.accessioned2023-11-17T08:24:48Z-
dc.date.available2023-11-17T08:24:48Z-
dc.date.issued2018-
dc.identifier.citationIEEE Transactions on Electron Devices, 2018, v. 65, n. 10, p. 4160-4166-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/335308-
dc.description.abstractReducing the energy and power dissipation of conductive bridge random access memory (CBRAM) cells is of critical importance for their applications in future Internet of Things (IoT) device and neuromorphic computing platforms. Atomically thin CBRAMs enabled by 2-D materials are studied theoretically by using 3-D kinetic Monte Carlo simulations together with experimental characterization. The results indicate the performance potential of attoJoule energy dissipation for intrinsic filament formation and a filament size of a single atomistic chain in such a CBRAM cell. The atomically thin CBRAM cells also show qualitatively different features from conventional CBRAM cells, including complete rupture of the filament in the reset stage and comparable forming and set voltages. The scaling and variability of the CBRAM cells down to sub-nanometer size of the switching layer as realized in the experiment are systematically studied, which indicates performance improvement and increased relative variability as the switching layer scales down. The results establish the ultimate limits of the size and energy scaling for CBRAM cells and illustrate the unique application of 2-D materials in ultralow power memory devices.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subject2-D material-
dc.subjectattoJoule energy dissipation-
dc.subjectconductive bridge (CB) random access memory (CBRAM)-
dc.subjectMonte Carlo (MC)-
dc.subjectnonvolatile memory-
dc.titleAtomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2018.2830328-
dc.identifier.scopuseid_2-s2.0-85046757767-
dc.identifier.volume65-
dc.identifier.issue10-
dc.identifier.spage4160-
dc.identifier.epage4166-
dc.identifier.isiWOS:000445239700017-

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