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Article: Emerging low-dimensional materials for mid-infrared detection

TitleEmerging low-dimensional materials for mid-infrared detection
Authors
Keywordsanisotropy
detectivity
gain
low-dimensional
mid-infrared detector
Issue Date2021
Citation
Nano Research, 2021, v. 14, n. 6, p. 1863-1877 How to Cite?
AbstractMid-infrared (IR) detectors based on the emerging low-dimensional (two-dimensional and quasi one-dimensional) materials offer unique characteristics including large bandgap tunability, optical polarization sensitivity and integrability with typical silicon process, which are not available in the mid-IR detectors based on traditional compound semiconductors. Here, we review the recent progress in study of mid-IR detectors based on the low-dimensional materials, including black phosphorus, black arsenic phosphorus, tellurene and BaTiS3, from the perspectives of crystal structure, material synthesis, optical properties, and the detector characteristics. The detector gain and detectivity are benchmarked, and the unique properties, such as the polarization sensitivity, are discussed. We also provide our perspective about key future research directions in this field. [Figure not available: see fulltext.]
Persistent Identifierhttp://hdl.handle.net/10722/335363
ISSN
2023 Impact Factor: 9.5
2023 SCImago Journal Rankings: 2.539
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, Jiangbin-
dc.contributor.authorWang, Nan-
dc.contributor.authorYan, Xiaodong-
dc.contributor.authorWang, Han-
dc.date.accessioned2023-11-17T08:25:15Z-
dc.date.available2023-11-17T08:25:15Z-
dc.date.issued2021-
dc.identifier.citationNano Research, 2021, v. 14, n. 6, p. 1863-1877-
dc.identifier.issn1998-0124-
dc.identifier.urihttp://hdl.handle.net/10722/335363-
dc.description.abstractMid-infrared (IR) detectors based on the emerging low-dimensional (two-dimensional and quasi one-dimensional) materials offer unique characteristics including large bandgap tunability, optical polarization sensitivity and integrability with typical silicon process, which are not available in the mid-IR detectors based on traditional compound semiconductors. Here, we review the recent progress in study of mid-IR detectors based on the low-dimensional materials, including black phosphorus, black arsenic phosphorus, tellurene and BaTiS3, from the perspectives of crystal structure, material synthesis, optical properties, and the detector characteristics. The detector gain and detectivity are benchmarked, and the unique properties, such as the polarization sensitivity, are discussed. We also provide our perspective about key future research directions in this field. [Figure not available: see fulltext.]-
dc.languageeng-
dc.relation.ispartofNano Research-
dc.subjectanisotropy-
dc.subjectdetectivity-
dc.subjectgain-
dc.subjectlow-dimensional-
dc.subjectmid-infrared detector-
dc.titleEmerging low-dimensional materials for mid-infrared detection-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s12274-020-3128-7-
dc.identifier.scopuseid_2-s2.0-85093981175-
dc.identifier.volume14-
dc.identifier.issue6-
dc.identifier.spage1863-
dc.identifier.epage1877-
dc.identifier.eissn1998-0000-
dc.identifier.isiWOS:000582105900001-

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