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- Publisher Website: 10.1109/LED.2022.3141692
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Article: Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs
Title | Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs |
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Authors | |
Keywords | band-to-band tunneling bandgap extraction Carbon nanotube CMOS leakage current MOSFET |
Issue Date | 2022 |
Citation | IEEE Electron Device Letters, 2022, v. 43, n. 3, p. 490-493 How to Cite? |
Abstract | Carbon nanotube (CNT) transistors exemplify the fundamental tradeoff between desirable high mobility and undesirable leakage current due to the small effective mass and bandgap. To understand leakage current limits in high-speed CNT transistors, electrical bandgaps are extracted on 12 single-CNT top-gate MOSFETs from the energy gap between thermionic emission and band-to-band tunneling (BTBT) at 10 K. At 300 K the minimum IOFF at 0.5 V VDS is analyzed as a function of bandgap between 0.96 eV and 0.43 eV with IOFF-MINfrom 0.2 pA/CNT to 15 nA/CNT. NEGF simulation validates the bandgap extraction methodology and reproduces the experimental MOSFET IOFF-MIN data. A TCAD model calibrated to this work's leakage data projects the accessible ION-IOFF design space bounded by CNT bandgap, indicating EG > 0.65 eV (dCNT < 1.3 nm) is needed to achieve 100 nA/ $\mu \text{m}$ at 0.5 V VDD and 250 CNT/ $\mu \text{m}$ for channel length above 20 nm. An EG of 1.06 eV (dCNT = 0.8 nm) can deliver $2750\times $ tunable range of IOFF by adjusting VT, which exceeds the $400\times $ tunable range of IOFF used in Si CMOS platform technologies. |
Persistent Identifier | http://hdl.handle.net/10722/335380 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lin, Qing | - |
dc.contributor.author | Pitner, Gregory | - |
dc.contributor.author | Gilardi, Carlo | - |
dc.contributor.author | Su, Sheng Kai | - |
dc.contributor.author | Zhang, Zichen | - |
dc.contributor.author | Chen, Edward | - |
dc.contributor.author | Bandaru, Prabhakar | - |
dc.contributor.author | Kummel, Andrew | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Passlack, Matthias | - |
dc.contributor.author | Mitra, Subhasish | - |
dc.contributor.author | Wong, H. S.Philip | - |
dc.date.accessioned | 2023-11-17T08:25:24Z | - |
dc.date.available | 2023-11-17T08:25:24Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2022, v. 43, n. 3, p. 490-493 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335380 | - |
dc.description.abstract | Carbon nanotube (CNT) transistors exemplify the fundamental tradeoff between desirable high mobility and undesirable leakage current due to the small effective mass and bandgap. To understand leakage current limits in high-speed CNT transistors, electrical bandgaps are extracted on 12 single-CNT top-gate MOSFETs from the energy gap between thermionic emission and band-to-band tunneling (BTBT) at 10 K. At 300 K the minimum IOFF at 0.5 V VDS is analyzed as a function of bandgap between 0.96 eV and 0.43 eV with IOFF-MINfrom 0.2 pA/CNT to 15 nA/CNT. NEGF simulation validates the bandgap extraction methodology and reproduces the experimental MOSFET IOFF-MIN data. A TCAD model calibrated to this work's leakage data projects the accessible ION-IOFF design space bounded by CNT bandgap, indicating EG > 0.65 eV (dCNT < 1.3 nm) is needed to achieve 100 nA/ $\mu \text{m}$ at 0.5 V VDD and 250 CNT/ $\mu \text{m}$ for channel length above 20 nm. An EG of 1.06 eV (dCNT = 0.8 nm) can deliver $2750\times $ tunable range of IOFF by adjusting VT, which exceeds the $400\times $ tunable range of IOFF used in Si CMOS platform technologies. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | band-to-band tunneling | - |
dc.subject | bandgap extraction | - |
dc.subject | Carbon nanotube | - |
dc.subject | CMOS | - |
dc.subject | leakage current | - |
dc.subject | MOSFET | - |
dc.title | Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2022.3141692 | - |
dc.identifier.scopus | eid_2-s2.0-85122891659 | - |
dc.identifier.volume | 43 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 490 | - |
dc.identifier.epage | 493 | - |
dc.identifier.eissn | 1558-0563 | - |
dc.identifier.isi | WOS:000761656500042 | - |