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Conference Paper: Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors

TitleContact Engineering for High-Performance N-Type 2D Semiconductor Transistors
Authors
Issue Date2021
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2021, v. 2021-December, p. 37.2.1-37.2.4 How to Cite?
AbstractTwo-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact to them has been challenging, which tremendously limit the transistor performance. In this paper, we review the recent research progress on the elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced gap states (MIGS). Specifically, an oxygen passivation method and a semimetallic contact technology were developed to reduce the DIGS and MIGS, respectively. Based on these approaches, much improved contact resistance and on-state current were observed. Key device metrics were extracted on these high-performance transistors, which reveals future directions for further improving the device performance.
Persistent Identifierhttp://hdl.handle.net/10722/335389
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLin, Y.-
dc.contributor.authorShen, P. C.-
dc.contributor.authorSu, C.-
dc.contributor.authorChou, A. S.-
dc.contributor.authorWu, T.-
dc.contributor.authorCheng, C. C.-
dc.contributor.authorPark, J. H.-
dc.contributor.authorChiu, M. H.-
dc.contributor.authorLu, A. Y.-
dc.contributor.authorTang, H. L.-
dc.contributor.authorTavakoli, M. M.-
dc.contributor.authorPitner, G.-
dc.contributor.authorJi, X.-
dc.contributor.authorMcGahan, C.-
dc.contributor.authorWang, X.-
dc.contributor.authorCai, Z.-
dc.contributor.authorMao, N.-
dc.contributor.authorWang, J.-
dc.contributor.authorWang, Y.-
dc.contributor.authorTisdale, W.-
dc.contributor.authorLing, X.-
dc.contributor.authorAidala, K. E.-
dc.contributor.authorTung, V.-
dc.contributor.authorLi, J.-
dc.contributor.authorZettl, A.-
dc.contributor.authorWu, C. I.-
dc.contributor.authorGuo, Jing-
dc.contributor.authorWang, H.-
dc.contributor.authorBokor, J.-
dc.contributor.authorPalacios, T.-
dc.contributor.authorLi, L. J.-
dc.contributor.authorKong, J.-
dc.date.accessioned2023-11-17T08:25:28Z-
dc.date.available2023-11-17T08:25:28Z-
dc.date.issued2021-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2021, v. 2021-December, p. 37.2.1-37.2.4-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/335389-
dc.description.abstractTwo-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact to them has been challenging, which tremendously limit the transistor performance. In this paper, we review the recent research progress on the elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced gap states (MIGS). Specifically, an oxygen passivation method and a semimetallic contact technology were developed to reduce the DIGS and MIGS, respectively. Based on these approaches, much improved contact resistance and on-state current were observed. Key device metrics were extracted on these high-performance transistors, which reveals future directions for further improving the device performance.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleContact Engineering for High-Performance N-Type 2D Semiconductor Transistors-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM19574.2021.9720668-
dc.identifier.scopuseid_2-s2.0-85126947629-
dc.identifier.volume2021-December-
dc.identifier.spage37.2.1-
dc.identifier.epage37.2.4-
dc.identifier.isiWOS:000812325400169-

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