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Article: Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling

TitleDielectric Material Technologies for 2-D Semiconductor Transistor Scaling
Authors
Keywords2-D materials
dielectrics
field-effect transistor
insulator
microprocessing technology
Moore's law
nanoelectronics
Issue Date2023
Citation
IEEE Transactions on Electron Devices, 2023, v. 70, n. 4, p. 1454-1473 How to Cite?
AbstractThe 2-D semiconductors have been recognized as promising channel materials for the ultimately scaled transistor technologies beyond silicon. An essential technology enabler for 2-D semiconductor electronics is the development of dielectric materials interfaced with 2-D semiconductors. In this review article, we overview different types of dielectric materials that are suitable for different application scenarios, including high-k gate dielectrics, low- k spacers, and thermal management materials under the paradigm of 2-D semiconductor electronics. A material selection guideline for dielectric materials and the key process technology modules are discussed in detail. A special emphasis is made on how each of the dielectric technologies may enable the further scaling and practical applications of 2-D semiconductor transistors. The state-of-the-art device technologies are summarized, and the remaining challenges toward practical applications are discussed from the industrial perspective.
Persistent Identifierhttp://hdl.handle.net/10722/335432
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLin, Yuxuan Cosmi-
dc.contributor.authorLin, Cheng Ming-
dc.contributor.authorChen, Hung Yu-
dc.contributor.authorVaziri, Sam-
dc.contributor.authorBao, Xinyu-
dc.contributor.authorWoon, Wei Yen-
dc.contributor.authorWang, Han-
dc.contributor.authorLiao, Szuya Sandy-
dc.date.accessioned2023-11-17T08:25:51Z-
dc.date.available2023-11-17T08:25:51Z-
dc.date.issued2023-
dc.identifier.citationIEEE Transactions on Electron Devices, 2023, v. 70, n. 4, p. 1454-1473-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/335432-
dc.description.abstractThe 2-D semiconductors have been recognized as promising channel materials for the ultimately scaled transistor technologies beyond silicon. An essential technology enabler for 2-D semiconductor electronics is the development of dielectric materials interfaced with 2-D semiconductors. In this review article, we overview different types of dielectric materials that are suitable for different application scenarios, including high-k gate dielectrics, low- k spacers, and thermal management materials under the paradigm of 2-D semiconductor electronics. A material selection guideline for dielectric materials and the key process technology modules are discussed in detail. A special emphasis is made on how each of the dielectric technologies may enable the further scaling and practical applications of 2-D semiconductor transistors. The state-of-the-art device technologies are summarized, and the remaining challenges toward practical applications are discussed from the industrial perspective.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subject2-D materials-
dc.subjectdielectrics-
dc.subjectfield-effect transistor-
dc.subjectinsulator-
dc.subjectmicroprocessing technology-
dc.subjectMoore's law-
dc.subjectnanoelectronics-
dc.titleDielectric Material Technologies for 2-D Semiconductor Transistor Scaling-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2022.3224100-
dc.identifier.scopuseid_2-s2.0-85144072490-
dc.identifier.volume70-
dc.identifier.issue4-
dc.identifier.spage1454-
dc.identifier.epage1473-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000912860100001-

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