File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/TED.2022.3224100
- Scopus: eid_2-s2.0-85144072490
- WOS: WOS:000912860100001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling
Title | Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling |
---|---|
Authors | |
Keywords | 2-D materials dielectrics field-effect transistor insulator microprocessing technology Moore's law nanoelectronics |
Issue Date | 2023 |
Citation | IEEE Transactions on Electron Devices, 2023, v. 70, n. 4, p. 1454-1473 How to Cite? |
Abstract | The 2-D semiconductors have been recognized as promising channel materials for the ultimately scaled transistor technologies beyond silicon. An essential technology enabler for 2-D semiconductor electronics is the development of dielectric materials interfaced with 2-D semiconductors. In this review article, we overview different types of dielectric materials that are suitable for different application scenarios, including high-k gate dielectrics, low- k spacers, and thermal management materials under the paradigm of 2-D semiconductor electronics. A material selection guideline for dielectric materials and the key process technology modules are discussed in detail. A special emphasis is made on how each of the dielectric technologies may enable the further scaling and practical applications of 2-D semiconductor transistors. The state-of-the-art device technologies are summarized, and the remaining challenges toward practical applications are discussed from the industrial perspective. |
Persistent Identifier | http://hdl.handle.net/10722/335432 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Yuxuan Cosmi | - |
dc.contributor.author | Lin, Cheng Ming | - |
dc.contributor.author | Chen, Hung Yu | - |
dc.contributor.author | Vaziri, Sam | - |
dc.contributor.author | Bao, Xinyu | - |
dc.contributor.author | Woon, Wei Yen | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Liao, Szuya Sandy | - |
dc.date.accessioned | 2023-11-17T08:25:51Z | - |
dc.date.available | 2023-11-17T08:25:51Z | - |
dc.date.issued | 2023 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2023, v. 70, n. 4, p. 1454-1473 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335432 | - |
dc.description.abstract | The 2-D semiconductors have been recognized as promising channel materials for the ultimately scaled transistor technologies beyond silicon. An essential technology enabler for 2-D semiconductor electronics is the development of dielectric materials interfaced with 2-D semiconductors. In this review article, we overview different types of dielectric materials that are suitable for different application scenarios, including high-k gate dielectrics, low- k spacers, and thermal management materials under the paradigm of 2-D semiconductor electronics. A material selection guideline for dielectric materials and the key process technology modules are discussed in detail. A special emphasis is made on how each of the dielectric technologies may enable the further scaling and practical applications of 2-D semiconductor transistors. The state-of-the-art device technologies are summarized, and the remaining challenges toward practical applications are discussed from the industrial perspective. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | 2-D materials | - |
dc.subject | dielectrics | - |
dc.subject | field-effect transistor | - |
dc.subject | insulator | - |
dc.subject | microprocessing technology | - |
dc.subject | Moore's law | - |
dc.subject | nanoelectronics | - |
dc.title | Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TED.2022.3224100 | - |
dc.identifier.scopus | eid_2-s2.0-85144072490 | - |
dc.identifier.volume | 70 | - |
dc.identifier.issue | 4 | - |
dc.identifier.spage | 1454 | - |
dc.identifier.epage | 1473 | - |
dc.identifier.eissn | 1557-9646 | - |
dc.identifier.isi | WOS:000912860100001 | - |