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Conference Paper: Comprehensive Physics Based TCAD Model for 2D MX2Channel Transistors

TitleComprehensive Physics Based TCAD Model for 2D MX<inf>2</inf>Channel Transistors
Authors
Sathaiya, D. MahaveerHung, Terry Y.T.Chen, EdwardWu, Wen ChiaWei, AslanChuu, Chih PiaoSu, Sheng KaiChou, Ang ShengChung, Cheng TingChien, Chao HsinWang, HanCai, JinWu, Chung ChengRadu, Iuliana P.Wu, Jeff
Issue Date2022
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 2841-2844 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM45625.2022.10019446
AbstractFor the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.
Persistent Identifierhttp://hdl.handle.net/10722/335434
ISSN
0163-1918
2020 SCImago Journal Rankings: 0.827

 

DC FieldValueLanguage
dc.contributor.authorSathaiya, D. Mahaveer-
dc.contributor.authorHung, Terry Y.T.-
dc.contributor.authorChen, Edward-
dc.contributor.authorWu, Wen Chia-
dc.contributor.authorWei, Aslan-
dc.contributor.authorChuu, Chih Piao-
dc.contributor.authorSu, Sheng Kai-
dc.contributor.authorChou, Ang Sheng-
dc.contributor.authorChung, Cheng Ting-
dc.contributor.authorChien, Chao Hsin-
dc.contributor.authorWang, Han-
dc.contributor.authorCai, Jin-
dc.contributor.authorWu, Chung Cheng-
dc.contributor.authorRadu, Iuliana P.-
dc.contributor.authorWu, Jeff-
dc.date.accessioned2023-11-17T08:25:52Z-
dc.date.available2023-11-17T08:25:52Z-
dc.date.issued2022-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 2841-2844-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/335434-
dc.description.abstractFor the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleComprehensive Physics Based TCAD Model for 2D MX<inf>2</inf>Channel Transistors-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM45625.2022.10019446-
dc.identifier.scopuseid_2-s2.0-85147495031-
dc.identifier.volume2022-December-
dc.identifier.spage2841-
dc.identifier.epage2844-

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