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Conference Paper: High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics

TitleHigh-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics
Authors
Issue Date2022
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 721-724 How to Cite?
AbstractLow resistance contact technology for 2D semiconductors is a key bottleneck for the practical application of 2D channel materials at advanced logic nodes. This work presents a novel Sb-Pt modulated contact technology which can alleviate the Fermi-level pinning effect and mediate the band alignment at the metal-2D semiconductor interface, leading to exceptional ohmic contacts for both p-type and n-type WSe2 FETs (p/n FET). WSe2 FETs with different Sb/Pt contact compositions, in combination with new oxide-based encapsulation/doping technologies, exhibits record low pFET contact resistance of 0.75 mathrm{k} Omega bullet mu mathrm{m} among all reported monolayer (1L) 2D pFETs. The nFET contact resistance of 1.8 mathrm{k} Omega bullet mu mathrm{m} is also the lowest among 1L WSe2 nFETs. Both 1L WSe2 pFET and nFET demonstrated remarkable on-state p/n current sim 150 mu mathrm{A}/ mu mathrm{m} at vert mathrm{V}-{D} vert =1 mathrm{V}, indicating the potential of WSe2 for CMOS applications. A new version of the semi-automated dry transfer process for chemical vapor deposition (CVD) WSe2 was also developed utilizing a novel Bi/PMMA/TRT support stack, offering low defect wrinkle-free WSe2 transfer at wafer-scale.
Persistent Identifierhttp://hdl.handle.net/10722/335436
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChou, Ang Sheng-
dc.contributor.authorLin, Yu Tung-
dc.contributor.authorLin, Yuxuan Cosmi-
dc.contributor.authorHsu, Ching Hao-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLiew, San Lin-
dc.contributor.authorChou, Sui An-
dc.contributor.authorChen, Hung Yu-
dc.contributor.authorChiu, Hsin Yuan-
dc.contributor.authorHo, Po Hsun-
dc.contributor.authorHsu, Ming Chun-
dc.contributor.authorHsu, Yu Wei-
dc.contributor.authorYang, Ning-
dc.contributor.authorWoon, Wei Yen-
dc.contributor.authorLiao, Szuya-
dc.contributor.authorHou, Duen Huei-
dc.contributor.authorChien, Chao Hsin-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorRadu, Iuliana-
dc.contributor.authorWu, Chih I.-
dc.contributor.authorPhilip Wong, H. S.-
dc.contributor.authorWang, Han-
dc.date.accessioned2023-11-17T08:25:53Z-
dc.date.available2023-11-17T08:25:53Z-
dc.date.issued2022-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 721-724-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/335436-
dc.description.abstractLow resistance contact technology for 2D semiconductors is a key bottleneck for the practical application of 2D channel materials at advanced logic nodes. This work presents a novel Sb-Pt modulated contact technology which can alleviate the Fermi-level pinning effect and mediate the band alignment at the metal-2D semiconductor interface, leading to exceptional ohmic contacts for both p-type and n-type WSe2 FETs (p/n FET). WSe2 FETs with different Sb/Pt contact compositions, in combination with new oxide-based encapsulation/doping technologies, exhibits record low pFET contact resistance of 0.75 mathrm{k} Omega bullet mu mathrm{m} among all reported monolayer (1L) 2D pFETs. The nFET contact resistance of 1.8 mathrm{k} Omega bullet mu mathrm{m} is also the lowest among 1L WSe2 nFETs. Both 1L WSe2 pFET and nFET demonstrated remarkable on-state p/n current sim 150 mu mathrm{A}/ mu mathrm{m} at vert mathrm{V}-{D} vert =1 mathrm{V}, indicating the potential of WSe2 for CMOS applications. A new version of the semi-automated dry transfer process for chemical vapor deposition (CVD) WSe2 was also developed utilizing a novel Bi/PMMA/TRT support stack, offering low defect wrinkle-free WSe2 transfer at wafer-scale.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleHigh-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM45625.2022.10019491-
dc.identifier.scopuseid_2-s2.0-85147522497-
dc.identifier.volume2022-December-
dc.identifier.spage721-
dc.identifier.epage724-
dc.identifier.isiWOS:000968800700147-

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