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Conference Paper: Monolithic 3D \mu-LED displays through BEOL integration of large-Area MoS2TFT matrix

TitleMonolithic 3D \mu-LED displays through BEOL integration of large-Area MoS<inf>2</inf>TFT matrix
Authors
Meng, WanqingXu, FeifanShen, XueTao, TaoYu, ZhihaoWen, KaichuanWang, JianpuQin, FengTu, XuecouNing, JingWang, DongZheng, YoudouLiu, BinZhang, RongShi, YiWang, Xinran
Issue Date2021
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2021, v. 2021-December, p. 9.4.1-9.4.4 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM19574.2021.9720703
AbstractUsing low-Temperature back end of line (BEOL) process, we realize 3D monolithic ultra-high-resolution \mu-LED displays driven by large-Area CVD MoS2 thin-film transistors (TFTs). The MoS2 transistors exhibit maximum and median mobility of 73 and 54 cm2 V-1s-1, drive current over 200 \mu rm{A}/\mu rm{m}, and excellent uniformity by systematic process innovation and optimization. Benefiting from high-performance TFT, the individual TFT-LED (1T-1D) cell delivers low operating voltage and high luminance of 7.1\times 10{7} cd/m2, which satisfies various display applications to the high resolution and brightness limit. We further demonstrate prototypical 32\times 32 active-matrix (AM) displays at 1270 PPI resolution.
Persistent Identifierhttp://hdl.handle.net/10722/336312
ISSN
0163-1918
2020 SCImago Journal Rankings: 0.827

 

DC FieldValueLanguage
dc.contributor.authorMeng, Wanqing-
dc.contributor.authorXu, Feifan-
dc.contributor.authorShen, Xue-
dc.contributor.authorTao, Tao-
dc.contributor.authorYu, Zhihao-
dc.contributor.authorWen, Kaichuan-
dc.contributor.authorWang, Jianpu-
dc.contributor.authorQin, Feng-
dc.contributor.authorTu, Xuecou-
dc.contributor.authorNing, Jing-
dc.contributor.authorWang, Dong-
dc.contributor.authorZheng, Youdou-
dc.contributor.authorLiu, Bin-
dc.contributor.authorZhang, Rong-
dc.contributor.authorShi, Yi-
dc.contributor.authorWang, Xinran-
dc.date.accessioned2024-01-15T08:25:28Z-
dc.date.available2024-01-15T08:25:28Z-
dc.date.issued2021-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2021, v. 2021-December, p. 9.4.1-9.4.4-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/336312-
dc.description.abstractUsing low-Temperature back end of line (BEOL) process, we realize 3D monolithic ultra-high-resolution \mu-LED displays driven by large-Area CVD MoS2 thin-film transistors (TFTs). The MoS2 transistors exhibit maximum and median mobility of 73 and 54 cm2 V-1s-1, drive current over 200 \mu rm{A}/\mu rm{m}, and excellent uniformity by systematic process innovation and optimization. Benefiting from high-performance TFT, the individual TFT-LED (1T-1D) cell delivers low operating voltage and high luminance of 7.1\times 10{7} cd/m2, which satisfies various display applications to the high resolution and brightness limit. We further demonstrate prototypical 32\times 32 active-matrix (AM) displays at 1270 PPI resolution.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleMonolithic 3D \mu-LED displays through BEOL integration of large-Area MoS<inf>2</inf>TFT matrix-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM19574.2021.9720703-
dc.identifier.scopuseid_2-s2.0-85126963530-
dc.identifier.volume2021-December-
dc.identifier.spage9.4.1-
dc.identifier.epage9.4.4-

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