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Article: A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

TitleA 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing
Authors
Keywords2D van der Waals heterostructures
floating gate
multimodal reservoir computing
optoelectronic memory devices
tellurium nanoflake
Issue Date2-Dec-2023
PublisherWiley
Citation
Advanced Materials, 2023 How to Cite?
Abstract

The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.


Persistent Identifierhttp://hdl.handle.net/10722/339376
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZha, Jiajia-
dc.contributor.authorXia, Yunpeng-
dc.contributor.authorShi, Shuhui-
dc.contributor.authorHuang, Haoxin-
dc.contributor.authorLi, Siyuan-
dc.contributor.authorQian, Chen-
dc.contributor.authorWang, Huide-
dc.contributor.authorYang, Peng-
dc.contributor.authorZhang, Zhuomin-
dc.contributor.authorMeng, You-
dc.contributor.authorWang, Wei-
dc.contributor.authorYang, Zhengbao-
dc.contributor.authorYu, Hongyu-
dc.contributor.authorHo, Johnny C-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorTan, Chaoliang-
dc.date.accessioned2024-03-11T10:36:06Z-
dc.date.available2024-03-11T10:36:06Z-
dc.date.issued2023-12-02-
dc.identifier.citationAdvanced Materials, 2023-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/339376-
dc.description.abstract<p>The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) <em>p</em>-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈10<sup>8</sup> extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.<br></p>-
dc.languageeng-
dc.publisherWiley-
dc.relation.ispartofAdvanced Materials-
dc.subject2D van der Waals heterostructures-
dc.subjectfloating gate-
dc.subjectmultimodal reservoir computing-
dc.subjectoptoelectronic memory devices-
dc.subjecttellurium nanoflake-
dc.titleA 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing-
dc.typeArticle-
dc.identifier.doi10.1002/adma.202308502-
dc.identifier.scopuseid_2-s2.0-85178202138-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:001112730500001-
dc.identifier.issnl0935-9648-

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