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Article: Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

TitleRecent Advances and Future Prospects for Memristive Materials, Devices, and Systems
Authors
Keywordscompute-in-memory
ferroelectric memory
in-sensor computing
ion-intercalation resistors
memristor
memtransistors
neuromorphic computing
phase change memory
resistive switching memory
Issue Date29-Jun-2023
PublisherAmerican Chemical Society
Citation
ACS Nano, 2023, v. 17, n. 13, p. 11994-12039 How to Cite?
Abstract

Memristive technology has been rapidly emerging as apotentialalternative to traditional CMOS technology, which is facing fundamentallimitations in its development. Since oxide-based resistive switcheswere demonstrated as memristors in 2008, memristive devices have garneredsignificant attention due to their biomimetic memory properties, whichpromise to significantly improve power consumption in computing applications.Here, we provide a comprehensive overview of recent advances in memristivetechnology, including memristive devices, theory, algorithms, architectures,and systems. In addition, we discuss research directions for variousapplications of memristive technology including hardware acceleratorsfor artificial intelligence, in-sensor computing, and probabilisticcomputing. Finally, we provide a forward-looking perspective on thefuture of memristive technology, outlining the challenges and opportunitiesfor further research and innovation in this field. By providing anup-to-date overview of the state-of-the-art in memristive technology,this review aims to inform and inspire further research in this field.


Persistent Identifierhttp://hdl.handle.net/10722/339395
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSong, Min-Kyu-
dc.contributor.authorKang, Ji-Hoon-
dc.contributor.authorZhang, Xinyuan-
dc.contributor.authorJi, Wonjae-
dc.contributor.authorAscoli, Alon-
dc.contributor.authorMessaris, Ioannis-
dc.contributor.authorDemirkol, Ahmet Samil-
dc.contributor.authorDong, Bowei-
dc.contributor.authorAggarwal, Samarth-
dc.contributor.authorWan, Weier-
dc.contributor.authorHong, Seok-Man-
dc.contributor.authorCardwell, Suma George-
dc.contributor.authorBoybat, Irem-
dc.contributor.authorSeo, Jae-sun-
dc.contributor.authorLee, Jang-Sik-
dc.contributor.authorLanza, Mario-
dc.contributor.authorYeon, Hanwool-
dc.contributor.authorOnen, Murat-
dc.contributor.authorLi, Ju-
dc.contributor.authorYildiz, Bilge-
dc.contributor.authordel Alamo, Jesús A-
dc.contributor.authorKim, Seyoung-
dc.contributor.authorChoi, Shinhyun-
dc.contributor.authorMilano, Gianluca-
dc.contributor.authorRicciardi, Carlo-
dc.contributor.authorAlff, Lambert-
dc.contributor.authorChai, Yang-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorBhaskaran, Harish-
dc.contributor.authorHersam, Mark C-
dc.contributor.authorStrukov, Dmitri-
dc.contributor.authorWong, H-S Philip-
dc.contributor.authorValov, Ilia-
dc.contributor.authorGao, Bin-
dc.contributor.authorWu, Huaqiang-
dc.contributor.authorTetzlaff, Ronald-
dc.contributor.authorSebastian, Abu-
dc.contributor.authorLu, Wei-
dc.contributor.authorChua, Leon-
dc.contributor.authorYang, J Joshua-
dc.contributor.authorKim, Jeehwan -
dc.date.accessioned2024-03-11T10:36:17Z-
dc.date.available2024-03-11T10:36:17Z-
dc.date.issued2023-06-29-
dc.identifier.citationACS Nano, 2023, v. 17, n. 13, p. 11994-12039-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/339395-
dc.description.abstract<p>Memristive technology has been rapidly emerging as apotentialalternative to traditional CMOS technology, which is facing fundamentallimitations in its development. Since oxide-based resistive switcheswere demonstrated as memristors in 2008, memristive devices have garneredsignificant attention due to their biomimetic memory properties, whichpromise to significantly improve power consumption in computing applications.Here, we provide a comprehensive overview of recent advances in memristivetechnology, including memristive devices, theory, algorithms, architectures,and systems. In addition, we discuss research directions for variousapplications of memristive technology including hardware acceleratorsfor artificial intelligence, in-sensor computing, and probabilisticcomputing. Finally, we provide a forward-looking perspective on thefuture of memristive technology, outlining the challenges and opportunitiesfor further research and innovation in this field. By providing anup-to-date overview of the state-of-the-art in memristive technology,this review aims to inform and inspire further research in this field.<br></p>-
dc.languageeng-
dc.publisherAmerican Chemical Society-
dc.relation.ispartofACS Nano-
dc.subjectcompute-in-memory-
dc.subjectferroelectric memory-
dc.subjectin-sensor computing-
dc.subjection-intercalation resistors-
dc.subjectmemristor-
dc.subjectmemtransistors-
dc.subjectneuromorphic computing-
dc.subjectphase change memory-
dc.subjectresistive switching memory-
dc.titleRecent Advances and Future Prospects for Memristive Materials, Devices, and Systems-
dc.typeArticle-
dc.identifier.doi10.1021/acsnano.3c03505-
dc.identifier.scopuseid_2-s2.0-85164302676-
dc.identifier.volume17-
dc.identifier.issue13-
dc.identifier.spage11994-
dc.identifier.epage12039-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:001019357000001-
dc.identifier.issnl1936-0851-

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