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Article: Editorial: In-memory sensing and computing: New materials and devices meet new challenges

TitleEditorial: In-memory sensing and computing: New materials and devices meet new challenges
Authors
Wan, ChangjinWang, ZhongruiJohn, Rohit Abraham
Keywordscomputing
memristor
memtransistor
neuromorphic
security
Issue Date21-Nov-2022
PublisherFrontiers Media
Citation
Frontiers in Nanotechnology, 2022, v. 4 How to Cite?
DOI: http://dx.doi.org/10.3389/fnano.2022.1073863
Persistent Identifierhttp://hdl.handle.net/10722/340964

 

DC FieldValueLanguage
dc.contributor.authorWan, Changjin-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorJohn, Rohit Abraham -
dc.date.accessioned2024-03-11T10:48:37Z-
dc.date.available2024-03-11T10:48:37Z-
dc.date.issued2022-11-21-
dc.identifier.citationFrontiers in Nanotechnology, 2022, v. 4-
dc.identifier.urihttp://hdl.handle.net/10722/340964-
dc.languageeng-
dc.publisherFrontiers Media-
dc.relation.ispartofFrontiers in Nanotechnology-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectcomputing-
dc.subjectmemristor-
dc.subjectmemtransistor-
dc.subjectneuromorphic-
dc.subjectsecurity-
dc.titleEditorial: In-memory sensing and computing: New materials and devices meet new challenges-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.3389/fnano.2022.1073863-
dc.identifier.scopuseid_2-s2.0-85143359426-
dc.identifier.volume4-
dc.identifier.eissn2673-3013-
dc.identifier.issnl2673-3013-

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