Investigation of Q degradation in low-loss Si3N4 from heterogeneous laser integration

Abstract

<p>High-performance, high-volume-manufacturing Si₃N₄ photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects. State-of-the-art quality factors (Q) over 200 million at 1550 nm have been shown previously; however, maintaining high Qs throughout laser fabrication has not been shown. Here, Si₃N₄ resonator intrinsic Qs over 100 million are demonstrated on a fully integrated heterogeneous laser platform. Q_i is measured throughout laser processing steps, showing degradationdownto50millionfromdryetching,metalevaporation, and ion implant steps, and controllable recovery to over 100 million from annealing at 250 ^◦C–350 ^◦C.<br></p>