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Conference Paper: Design space and origin of off-state leakage in GaN vertical power diodes

TitleDesign space and origin of off-state leakage in GaN vertical power diodes
Authors
Zhang, Y.Wong, H. Y.Sun, M.Joglekar, S.Yu, L.Braga, N. A.Mickevicius, R. V.Palacios, T.
Issue Date2015
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2015, v. 2016-February, p. 35.1.1-35.1.4 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2015.7409830
AbstractVariable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices.
Persistent Identifierhttp://hdl.handle.net/10722/352140
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047

 

DC FieldValueLanguage
dc.contributor.authorZhang, Y.-
dc.contributor.authorWong, H. Y.-
dc.contributor.authorSun, M.-
dc.contributor.authorJoglekar, S.-
dc.contributor.authorYu, L.-
dc.contributor.authorBraga, N. A.-
dc.contributor.authorMickevicius, R. V.-
dc.contributor.authorPalacios, T.-
dc.date.accessioned2024-12-16T03:56:56Z-
dc.date.available2024-12-16T03:56:56Z-
dc.date.issued2015-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2015, v. 2016-February, p. 35.1.1-35.1.4-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/352140-
dc.description.abstractVariable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleDesign space and origin of off-state leakage in GaN vertical power diodes-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2015.7409830-
dc.identifier.scopuseid_2-s2.0-84964027408-
dc.identifier.volume2016-February-
dc.identifier.spage35.1.1-
dc.identifier.epage35.1.4-

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