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Conference Paper: Advanced power electronic devices based on Gallium Nitride (GaN)

TitleAdvanced power electronic devices based on Gallium Nitride (GaN)
Authors
Piedra, DanielLu, BinSun, MinZhang, YuhaoMatioli, ElisonGao, FengChung, Jinwook WillSaadat, OmairXia, LingAzize, MohamedPalacios, Tomas
Issue Date2015
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2015, v. 2016-February, p. 16.6.1-16.6.4 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2015.7409713
AbstractIt is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to significantly increase the reach and impact of power electronics. This paper describes some of the recent advances on developing power devices based on Gallium Nitride (GaN), the key design constrains, and the process to take a new device material and structure from the research laboratory of universities to full commercialization.
Persistent Identifierhttp://hdl.handle.net/10722/352141
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047

 

DC FieldValueLanguage
dc.contributor.authorPiedra, Daniel-
dc.contributor.authorLu, Bin-
dc.contributor.authorSun, Min-
dc.contributor.authorZhang, Yuhao-
dc.contributor.authorMatioli, Elison-
dc.contributor.authorGao, Feng-
dc.contributor.authorChung, Jinwook Will-
dc.contributor.authorSaadat, Omair-
dc.contributor.authorXia, Ling-
dc.contributor.authorAzize, Mohamed-
dc.contributor.authorPalacios, Tomas-
dc.date.accessioned2024-12-16T03:56:56Z-
dc.date.available2024-12-16T03:56:56Z-
dc.date.issued2015-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2015, v. 2016-February, p. 16.6.1-16.6.4-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/352141-
dc.description.abstractIt is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to significantly increase the reach and impact of power electronics. This paper describes some of the recent advances on developing power devices based on Gallium Nitride (GaN), the key design constrains, and the process to take a new device material and structure from the research laboratory of universities to full commercialization.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleAdvanced power electronic devices based on Gallium Nitride (GaN)-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2015.7409713-
dc.identifier.scopuseid_2-s2.0-84964039355-
dc.identifier.volume2016-February-
dc.identifier.spage16.6.1-
dc.identifier.epage16.6.4-

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