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Article: Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Title | Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation |
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Authors | |
Keywords | GaN device high breakdown voltage ion implantation junction barrier Schottky rectifiers low ON-resistance Mg activation Si activation vertical power rectifiers |
Issue Date | 2017 |
Citation | IEEE Electron Device Letters, 2017, v. 38, n. 8, p. 1097-1100 How to Cite? |
Abstract | This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different methods to form the lateral p-n grids below the Schottky contact: 1) Mg implantation into n-GaN to form p-wells and 2) Si implantation into p-GaN to form n-wells. Specific differential ON-resistances (RON) of 1.5-2.5 mΩ · cm2 and 7-9 mΩ · cm2 were obtained in the Mg-implanted and Si-implanted JBS rectifiers, respectively. A breakdown voltage of 500-600 V was achieved in both devices, with a leakage current at high reverse biases at least 100-fold lower than conventional vertical GaN Schottky barrier diodes. The impact of n-well and p-well widths on the RON and BV was investigated. Fast switching capability was also demonstrated. This letter shows the feasibility of forming patterned p-n junctions by novel ion implantation techniques, to enable high-performance vertical GaN power devices. |
Persistent Identifier | http://hdl.handle.net/10722/352154 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
DC Field | Value | Language |
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dc.contributor.author | Zhang, Yuhao | - |
dc.contributor.author | Liu, Zhihong | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.contributor.author | Sun, Min | - |
dc.contributor.author | Piedra, Daniel | - |
dc.contributor.author | Hatem, Christopher | - |
dc.contributor.author | Anderson, Travis J. | - |
dc.contributor.author | Luna, Lunet E. | - |
dc.contributor.author | Nath, Anindya | - |
dc.contributor.author | Koehler, Andrew D. | - |
dc.contributor.author | Okumura, Hironori | - |
dc.contributor.author | Hu, Jie | - |
dc.contributor.author | Zhang, Xu | - |
dc.contributor.author | Gao, Xiang | - |
dc.contributor.author | Feigelson, Boris N. | - |
dc.contributor.author | Hobart, Karl D. | - |
dc.contributor.author | Palacios, Tómas | - |
dc.date.accessioned | 2024-12-16T03:57:01Z | - |
dc.date.available | 2024-12-16T03:57:01Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2017, v. 38, n. 8, p. 1097-1100 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/352154 | - |
dc.description.abstract | This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different methods to form the lateral p-n grids below the Schottky contact: 1) Mg implantation into n-GaN to form p-wells and 2) Si implantation into p-GaN to form n-wells. Specific differential ON-resistances (RON) of 1.5-2.5 mΩ · cm2 and 7-9 mΩ · cm2 were obtained in the Mg-implanted and Si-implanted JBS rectifiers, respectively. A breakdown voltage of 500-600 V was achieved in both devices, with a leakage current at high reverse biases at least 100-fold lower than conventional vertical GaN Schottky barrier diodes. The impact of n-well and p-well widths on the RON and BV was investigated. Fast switching capability was also demonstrated. This letter shows the feasibility of forming patterned p-n junctions by novel ion implantation techniques, to enable high-performance vertical GaN power devices. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | GaN device | - |
dc.subject | high breakdown voltage | - |
dc.subject | ion implantation | - |
dc.subject | junction barrier Schottky rectifiers | - |
dc.subject | low ON-resistance | - |
dc.subject | Mg activation | - |
dc.subject | Si activation | - |
dc.subject | vertical power rectifiers | - |
dc.title | Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2017.2720689 | - |
dc.identifier.scopus | eid_2-s2.0-85023743898 | - |
dc.identifier.volume | 38 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 1097 | - |
dc.identifier.epage | 1100 | - |