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Article: Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2 O3 :N with high mobility
Title | Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga<inf>2</inf>O<inf>3</inf>:N with high mobility |
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Authors | |
Issue Date | 2022 |
Citation | Applied Physics Letters, 2022, v. 121, n. 19, article no. 192102 How to Cite? |
Abstract | Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration of ∼1017 cm-3 were incorporated during epitaxial growth yielding low-doped (net donor concentration <1014 cm-3) films subsequently implanted with Si, Ge, and Sn. Upon Ohmic contact formation to the implanted regions, sheet resistance values of 314, 926, and 1676 ω/sq were measured at room temperature for the Si-, Ge-, and Sn-implanted samples, respectively. Room temperature Hall measurements resulted in sheet carrier concentrations and Hall mobilities of 2.13 × 1014 /93, 8.58 × 1013/78, and 5.87 × 1013/63 cm2/(V s), respectively, for these three donor species. Secondary ion mass spectroscopy showed a volumetric dopant concentration of approximately 2 × 1019 cm-3 for the three species, resulting in carrier activation efficiencies of 64.7%, 40.3%, and 28.2% for Si, Ge, and Sn, respectively. Temperature-dependent Hall effect measurements ranging from 15 to 300 K showed a nearly constant carrier concentration in the Si-implanted sample, suggesting the formation of an impurity band indicative of degenerate doping. With a bulk carrier concentration of 1.3 × 1019 cm-3 for the Si implanted sample, a room temperature mobility of 93 cm2/(V s) is among the highest reported in Ga2O3 with a similar carrier concentration. The unimplanted Ga2O3:N regions remained highly resistive after the surrounding areas received implant and activation anneal. These results open the pathway for fabricating Ga2O3 devices through the selective n-type doping in highly resistive epitaxial Ga2O3. |
Persistent Identifier | http://hdl.handle.net/10722/352328 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
DC Field | Value | Language |
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dc.contributor.author | Spencer, Joseph A. | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.contributor.author | Jacobs, Alan G. | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Lyons, John L. | - |
dc.contributor.author | Freitas, Jaime A. | - |
dc.contributor.author | Gallagher, James C. | - |
dc.contributor.author | Thieu, Quang T. | - |
dc.contributor.author | Sasaki, Kohei | - |
dc.contributor.author | Kuramata, Akito | - |
dc.contributor.author | Zhang, Yuhao | - |
dc.contributor.author | Anderson, Travis J. | - |
dc.contributor.author | Hobart, Karl D. | - |
dc.date.accessioned | 2024-12-16T03:58:17Z | - |
dc.date.available | 2024-12-16T03:58:17Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | Applied Physics Letters, 2022, v. 121, n. 19, article no. 192102 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/352328 | - |
dc.description.abstract | Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration of ∼1017 cm-3 were incorporated during epitaxial growth yielding low-doped (net donor concentration <1014 cm-3) films subsequently implanted with Si, Ge, and Sn. Upon Ohmic contact formation to the implanted regions, sheet resistance values of 314, 926, and 1676 ω/sq were measured at room temperature for the Si-, Ge-, and Sn-implanted samples, respectively. Room temperature Hall measurements resulted in sheet carrier concentrations and Hall mobilities of 2.13 × 1014 /93, 8.58 × 1013/78, and 5.87 × 1013/63 cm2/(V s), respectively, for these three donor species. Secondary ion mass spectroscopy showed a volumetric dopant concentration of approximately 2 × 1019 cm-3 for the three species, resulting in carrier activation efficiencies of 64.7%, 40.3%, and 28.2% for Si, Ge, and Sn, respectively. Temperature-dependent Hall effect measurements ranging from 15 to 300 K showed a nearly constant carrier concentration in the Si-implanted sample, suggesting the formation of an impurity band indicative of degenerate doping. With a bulk carrier concentration of 1.3 × 1019 cm-3 for the Si implanted sample, a room temperature mobility of 93 cm2/(V s) is among the highest reported in Ga2O3 with a similar carrier concentration. The unimplanted Ga2O3:N regions remained highly resistive after the surrounding areas received implant and activation anneal. These results open the pathway for fabricating Ga2O3 devices through the selective n-type doping in highly resistive epitaxial Ga2O3. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga<inf>2</inf>O<inf>3</inf>:N with high mobility | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/5.0120494 | - |
dc.identifier.scopus | eid_2-s2.0-85143252568 | - |
dc.identifier.volume | 121 | - |
dc.identifier.issue | 19 | - |
dc.identifier.spage | article no. 192102 | - |
dc.identifier.epage | article no. 192102 | - |