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Conference Paper: Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit

TitleSuperior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit
Authors
KeywordsESD
GaN
Gate driver
HEMT
On resistance
Reliability
Stability
Threshold voltage
Issue Date2023
Citation
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2023, v. 2023-March, p. 661-666 How to Cite?
AbstractA gate electrostatic discharge (ESD) protection circuit has recently been deployed in GaN p-gate high electron mobility transistors (HEMTs) to enhance the gate robustness. This on-chip protection circuit clamps the ESD overvoltage to a moderate value and re-directs the transient energy to ground. This work, for the first time, investigates the impact of this ESD protection circuit on the stability of device critical parameters, i.e., threshold voltage (Vth) and on-resistance (Ron). A new industrial device with an on-chip gate ESD protection circuit, as well as a commercial device with a similar gate structure but no protection circuit, are comparatively characterized. Staticstress and pulse-IV tests are used to evaluate the long-term and short-transient parametric shifts, respectively. Devices are stressed under negative gate driving voltage, high drain bias, and high temperature. The device with the ESD protection circuit shows significantly superior stability in Vth and Ron. This is attributable to the suppression of carrier trapping in the gate stack and access region. These results reveal a new pathway to address the inherent parametric instability in p-gate GaN HEMTs, at the same time boosting the gate robustness
Persistent Identifierhttp://hdl.handle.net/10722/352366

 

DC FieldValueLanguage
dc.contributor.authorWang, Bixuan-
dc.contributor.authorSong, Qihao-
dc.contributor.authorZhang, Ruizhe-
dc.contributor.authorSun, Yi-
dc.contributor.authorKong, Pengju-
dc.contributor.authorLi, Qiang-
dc.contributor.authorZhang, Yuhao-
dc.date.accessioned2024-12-16T03:58:30Z-
dc.date.available2024-12-16T03:58:30Z-
dc.date.issued2023-
dc.identifier.citationConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2023, v. 2023-March, p. 661-666-
dc.identifier.urihttp://hdl.handle.net/10722/352366-
dc.description.abstractA gate electrostatic discharge (ESD) protection circuit has recently been deployed in GaN p-gate high electron mobility transistors (HEMTs) to enhance the gate robustness. This on-chip protection circuit clamps the ESD overvoltage to a moderate value and re-directs the transient energy to ground. This work, for the first time, investigates the impact of this ESD protection circuit on the stability of device critical parameters, i.e., threshold voltage (Vth) and on-resistance (Ron). A new industrial device with an on-chip gate ESD protection circuit, as well as a commercial device with a similar gate structure but no protection circuit, are comparatively characterized. Staticstress and pulse-IV tests are used to evaluate the long-term and short-transient parametric shifts, respectively. Devices are stressed under negative gate driving voltage, high drain bias, and high temperature. The device with the ESD protection circuit shows significantly superior stability in Vth and Ron. This is attributable to the suppression of carrier trapping in the gate stack and access region. These results reveal a new pathway to address the inherent parametric instability in p-gate GaN HEMTs, at the same time boosting the gate robustness-
dc.languageeng-
dc.relation.ispartofConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC-
dc.subjectESD-
dc.subjectGaN-
dc.subjectGate driver-
dc.subjectHEMT-
dc.subjectOn resistance-
dc.subjectReliability-
dc.subjectStability-
dc.subjectThreshold voltage-
dc.titleSuperior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/APEC43580.2023.10131618-
dc.identifier.scopuseid_2-s2.0-85162269682-
dc.identifier.volume2023-March-
dc.identifier.spage661-
dc.identifier.epage666-

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