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Article: Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices (Ⅰ)

TitlePreface to Special Issue on Towards High Performance Ga<inf>2</inf>O<inf>3</inf> Electronics: Epitaxial Growth and Power Devices (Ⅰ)
Authors
Han, GenquanLong, ShibingZhang, YuhaoWang, YiboWei, Zhongming
Issue Date2023
Citation
Journal of Semiconductors, 2023, v. 44, n. 6, article no. 060101 How to Cite?
DOI: http://dx.doi.org/10.1088/1674-4926/44/6/060101
Persistent Identifierhttp://hdl.handle.net/10722/352371
ISSN
1674-4926
2023 Impact Factor: 4.8
2023 SCImago Journal Rankings: 0.856
ISI Accession Number ID
WOS:001017142000001

 

DC FieldValueLanguage
dc.contributor.authorHan, Genquan-
dc.contributor.authorLong, Shibing-
dc.contributor.authorZhang, Yuhao-
dc.contributor.authorWang, Yibo-
dc.contributor.authorWei, Zhongming-
dc.date.accessioned2024-12-16T03:58:31Z-
dc.date.available2024-12-16T03:58:31Z-
dc.date.issued2023-
dc.identifier.citationJournal of Semiconductors, 2023, v. 44, n. 6, article no. 060101-
dc.identifier.issn1674-4926-
dc.identifier.urihttp://hdl.handle.net/10722/352371-
dc.languageeng-
dc.relation.ispartofJournal of Semiconductors-
dc.titlePreface to Special Issue on Towards High Performance Ga<inf>2</inf>O<inf>3</inf> Electronics: Epitaxial Growth and Power Devices (Ⅰ)-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1674-4926/44/6/060101-
dc.identifier.scopuseid_2-s2.0-85163839845-
dc.identifier.volume44-
dc.identifier.issue6-
dc.identifier.spagearticle no. 060101-
dc.identifier.epagearticle no. 060101-
dc.identifier.isiWOS:001017142000001-

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