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- Publisher Website: 10.1007/s11664-024-10966-5
- Scopus: eid_2-s2.0-85186559970
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Article: PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2 O3 Substrates
Title | PtO<inf>x</inf> Schottky Contacts on Degenerately Doped 2¯01β-Ga<inf>2</inf>O<inf>3</inf> Substrates |
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Authors | |
Keywords | barrier height degenerate doping Gallium oxide platinum oxide Schottky contact |
Issue Date | 2024 |
Citation | Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2798-2805 How to Cite? |
Abstract | Platinum oxide (PtOx) Schottky contacts on degenerately doped β-Ga2O3 substrates show an increased barrier height of 85% and 64% when compared to nickel and platinum Schottky contacts, respectively. At low reverse voltage bias, the reverse leakage current of the PtOx Schottky barrier diodes was approximately 5–6 orders of magnitude lower than the reference evaporated Ni and Pt Schottky contacts. PtOx Schottky contacts were deposited using reactive sputtering on highly doped (8 × 1018 cm−3) (2¯01) β-Ga2O3:Sn substrates grown by the edge-defined film-fed growth (EFG) method. All Schottky metals were capped with evaporated Au. Capacitance–voltage and temperature-dependent current–voltage measurements were performed in order to extract the barrier height of the PtOx Schottky contact. Analysis of the diode ideality factors reveal that the PtOx Schottky contacts on highly doped β-Ga2O3 do not follow the thermionic field emission model and are impacted by inhomogeneous barrier height distribution. This work highlights the significance of PtOx Schottky contacts for β-Ga2O3-based power devices as a means for reducing leakage current. This work also holds relevance for low-voltage applications, where Schottky contacts for degenerately doped semiconductors can enable new electronic device applications. |
Persistent Identifier | http://hdl.handle.net/10722/352414 |
ISSN | 2023 Impact Factor: 2.2 2023 SCImago Journal Rankings: 0.439 |
DC Field | Value | Language |
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dc.contributor.author | Spencer, Joseph A. | - |
dc.contributor.author | Jacobs, Alan G. | - |
dc.contributor.author | Hobart, Karl D. | - |
dc.contributor.author | Koehler, Andrew D. | - |
dc.contributor.author | Anderson, Travis J. | - |
dc.contributor.author | Zhang, Yuhao | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.date.accessioned | 2024-12-16T03:58:48Z | - |
dc.date.available | 2024-12-16T03:58:48Z | - |
dc.date.issued | 2024 | - |
dc.identifier.citation | Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2798-2805 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | http://hdl.handle.net/10722/352414 | - |
dc.description.abstract | Platinum oxide (PtOx) Schottky contacts on degenerately doped β-Ga2O3 substrates show an increased barrier height of 85% and 64% when compared to nickel and platinum Schottky contacts, respectively. At low reverse voltage bias, the reverse leakage current of the PtOx Schottky barrier diodes was approximately 5–6 orders of magnitude lower than the reference evaporated Ni and Pt Schottky contacts. PtOx Schottky contacts were deposited using reactive sputtering on highly doped (8 × 1018 cm−3) (2¯01) β-Ga2O3:Sn substrates grown by the edge-defined film-fed growth (EFG) method. All Schottky metals were capped with evaporated Au. Capacitance–voltage and temperature-dependent current–voltage measurements were performed in order to extract the barrier height of the PtOx Schottky contact. Analysis of the diode ideality factors reveal that the PtOx Schottky contacts on highly doped β-Ga2O3 do not follow the thermionic field emission model and are impacted by inhomogeneous barrier height distribution. This work highlights the significance of PtOx Schottky contacts for β-Ga2O3-based power devices as a means for reducing leakage current. This work also holds relevance for low-voltage applications, where Schottky contacts for degenerately doped semiconductors can enable new electronic device applications. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Electronic Materials | - |
dc.subject | barrier height | - |
dc.subject | degenerate doping | - |
dc.subject | Gallium oxide | - |
dc.subject | platinum oxide | - |
dc.subject | Schottky contact | - |
dc.title | PtO<inf>x</inf> Schottky Contacts on Degenerately Doped 2¯01β-Ga<inf>2</inf>O<inf>3</inf> Substrates | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1007/s11664-024-10966-5 | - |
dc.identifier.scopus | eid_2-s2.0-85186559970 | - |
dc.identifier.volume | 53 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 2798 | - |
dc.identifier.epage | 2805 | - |
dc.identifier.eissn | 1543-186X | - |