Silicon Ion Implant Activation in β-(Al<inf>0.2</inf>Ga<inf>0.8</inf>)<inf>2</inf>O<inf>3</inf>

Abstract

As gallium oxide-based heterojunction devices gain prominence, low-resistance contacts to aluminum gallium oxide material are of increasing importance for high performance and access to modulation doped layers. Here, the activation of ion-implanted silicon donors is investigated as a function of donor density from 5 × 1018 cm−3 to 1 × 1020 cm−3, activation anneal duration from 6 s to 600 s, and activation temperature from 900°C to 1140°C. Importantly, ohmic behavior was achievable across a reasonably wide process window at moderate to high doping concentrations. Specific contact resistance of 1 × 10−3 Ω cm2 and sheet resistance of 2.8 kΩ/□ were achieved for a 60 nm-deep 1 × 1020 cm−3 box implant after activation at 1000°C for 6 s with standard Ti/Au contacts. Under these conditions, an activation efficiency of 7% was observed with Hall mobility of ~32 cm2/Vs. Furthermore, we demonstrate a Schottky diode formed of implanted material with a rectification ratio > 106 and further confirm the Hall carrier density results using capacitance–voltage profiling analysis. Finally, we show the significant impact of anneal duration and the potential for deleterious over-annealing which reduces the active carrier density, mobility, and resultant material conductivity.