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Article: All-in-one iontronic device with memory, processing and power capabilities towards dust-sized computers

TitleAll-in-one iontronic device with memory, processing and power capabilities towards dust-sized computers
Authors
Keywordsall-in-one fusion
ion dynamics
memristor
on-chip power
performance uniformity
Issue Date1-Jan-2025
PublisherSpringer
Citation
Nano Research, 2025, v. 18, n. 1 How to Cite?
AbstractFusion of memory, processing and power components enables creating autonomous and monolithically-integrated dust-sized computers for ubiquitous computing. However, this effort is limited by contradictory ion dynamics and performance variability of each component. Here we report an all-in-one dual-ion device that integrates memory, processing and power functionalities. By electrically modulating ion species (Li+ and O2−) and amounts participating in the electrochemistry, the complete memristor modes (including analog, volatile digital and nonvolatile digital types) and on-chip power modes are created on demand in this device. Because of their distinct properties, the roles of Li+ and O2− are easily distinguished and modulated by electrical operation for meeting the customized demand of each mode. Moreover, the homogeneous migration of Li+ ensures high uniformity of the Li+-based modes. The oxygen vacancy-based conductive filaments are finely defined by mechanical deformation through electrically controlling ion intercalation/deintercalation, thus guaranteeing high uniformity of the O2−-based modes. Both neuromorphic and logic in-memory computing are well demonstrated based on this all-in-one device.
Persistent Identifierhttp://hdl.handle.net/10722/367324
ISSN
2023 Impact Factor: 9.5
2023 SCImago Journal Rankings: 2.539

 

DC FieldValueLanguage
dc.contributor.authorWang, Dong-
dc.contributor.authorWang, Mingyang-
dc.contributor.authorZhang, Zhihan-
dc.contributor.authorWang, Jian-
dc.contributor.authorZhou, Ziye-
dc.contributor.authorLai, Peter To-
dc.contributor.authorHuang, Xiaodong-
dc.date.accessioned2025-12-10T08:06:33Z-
dc.date.available2025-12-10T08:06:33Z-
dc.date.issued2025-01-01-
dc.identifier.citationNano Research, 2025, v. 18, n. 1-
dc.identifier.issn1998-0124-
dc.identifier.urihttp://hdl.handle.net/10722/367324-
dc.description.abstractFusion of memory, processing and power components enables creating autonomous and monolithically-integrated dust-sized computers for ubiquitous computing. However, this effort is limited by contradictory ion dynamics and performance variability of each component. Here we report an all-in-one dual-ion device that integrates memory, processing and power functionalities. By electrically modulating ion species (Li<sup>+</sup> and O<sup>2−</sup>) and amounts participating in the electrochemistry, the complete memristor modes (including analog, volatile digital and nonvolatile digital types) and on-chip power modes are created on demand in this device. Because of their distinct properties, the roles of Li<sup>+</sup> and O<sup>2−</sup> are easily distinguished and modulated by electrical operation for meeting the customized demand of each mode. Moreover, the homogeneous migration of Li<sup>+</sup> ensures high uniformity of the Li<sup>+</sup>-based modes. The oxygen vacancy-based conductive filaments are finely defined by mechanical deformation through electrically controlling ion intercalation/deintercalation, thus guaranteeing high uniformity of the O<sup>2−</sup>-based modes. Both neuromorphic and logic in-memory computing are well demonstrated based on this all-in-one device.-
dc.languageeng-
dc.publisherSpringer-
dc.relation.ispartofNano Research-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectall-in-one fusion-
dc.subjection dynamics-
dc.subjectmemristor-
dc.subjecton-chip power-
dc.subjectperformance uniformity-
dc.titleAll-in-one iontronic device with memory, processing and power capabilities towards dust-sized computers-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.26599/NR.2025.94907043-
dc.identifier.scopuseid_2-s2.0-105000192296-
dc.identifier.volume18-
dc.identifier.issue1-
dc.identifier.eissn1998-0000-
dc.identifier.issnl1998-0000-

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